A novel type heterojunction photodiodes formed junctions of Au/LiZnSnO and LiZnSnO/p-Si in series

Aydın, Handan; Tataroğlu, A.; Al-Ghamdi, Ahmed A.; Yakuphanoğlu, F.; El-Tantawy, Farid; Farooq, W. A.

doi:10.1016/j.jallcom.2014.11.035

Cited by 47 publications

(16 citation statements)

References 51 publications

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“…The value of ideality factor and barrier height determined from the forward bias I-V characteristics for dark and 100 mW/cm 2 is given in Table 1. The obtained ideality factor value is higher than unity due to series resistance, inhomogeneities of barrier height and interface states [40][41][42][43][44][45]. In addition, the series resistance affects the linear region of forward bias I-V curves and in turn, the linear region deviates from linearity.…”

Section: Photocurrent-voltage (I-v) Characteristics Of the Diodementioning

confidence: 89%

Structural, Electrical and Photoresponse Properties of Si-based Diode with Organic Interfacial Layer Containing Novel Cyclotriphosphazene Compound

Yakuphanoğlu

Koran

Özen

et al. 2017

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The electrical and photoresponse properties of an Al/p-Si/organic layer/Al diode were investigated. The organic layer containing novel 2,2-bis[spiro(7,8-dioxy-4-methylcoumarin)]-4,4,6,6-bis[spiro(2',2"-dioxy-1',1"biphenylyl)]cyclotriphosphazene compound was coated by the drop casting method on p-Si having ohmic contact. The structural characterization of the novel cyclotriphosphazene compound was confirmed by using 1 H, 13 C and 31 P-NMR, elemental analysis and FTIR spectroscopic techniques. The diode exhibits a photoconducting and photodiode behavior under solar light illumination. The electrical parameters such as ideality factor, barrier height and series resistance of the diode were determined from I-V characteristics. It is seen that the photocurrent of the diode under illumination is higher than the dark current. Also, the frequency dependence of capacitance (C) and conductance (G) was explained on the basis of interface states. It is evaluated that the hybrid photodiode can be used as a photosensor in organic photodetector applications.

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Section: Photocurrent-voltage (I-v) Characteristics Of the Diodementioning

confidence: 89%

Structural, Electrical and Photoresponse Properties of Si-based Diode with Organic Interfacial Layer Containing Novel Cyclotriphosphazene Compound

Yakuphanoğlu

Koran

Özen

et al. 2017

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“…The reverse current of the diodes at a given reverse bias voltage under illumination is higher than that of the dark current, i.e., the reverse current increases with increase in illumination intensity [18][19][20][21]. Moreover, the applied voltage dependence of the reverse current can be attributed to the photoexcitation of charge carriers from the valence band to a defect-perturbed host state.…”

Section: Current-voltage Characteristics Of the Diodesmentioning

confidence: 96%

“…After turning on the illumination, the number of free charge carriers increases, and the photogenerated electrons contribute to the current. On the other hand, after turning off the illumination, the photocurrent decreases due to the trapping of the charge carriers in the deep levels [18,19,[33][34][35][36]. As a result, the diodes exhibit photoconducting behavior.…”

Section: Transient Photocurrent Photocapacitance and Photoconductancmentioning

confidence: 99%

Graphene–cobalt phthalocyanine based on optoelectronic device for solar panel tracking systems

et al. 2015

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“…Nonetheless, the physical, optical, morphological, and electrical characteristics of ZnO nanostructures can be improved by the doping of some transition metal ions such as Cr, Mn, Fe, Co, and Ni [6,7]. The doped metal oxide, incorporated into ZnO nanostructures, affects its bandgap, electrical and optical characteristics [8]. The contribution of metal oxides or transition metals leads to an increase in surface imperfections, which are the cause of electrical and optical conductivity [9].…”

Section: Introductionmentioning

confidence: 99%

The Effects of the Mn2+ Ions on the Morphological Properties of Zinc Oxide Thin Films

Aydın¹,

Orhan²

2020

MEJS

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The nanocrystalline ZnO thin films were successfully prepared via the sol-gel spin coating method for the different atomic ratios Mn doping (0.1%, 0.5%, 1%, 2%, 5%). The detailed surface analysis of samples was performed by Atomic Force Microscopy (AFM). The AFM results indicate that the ZnO films have nanostructure. The morphological characteristics of films show that Mn2+ ions are included in the crystal lattice of ZnO without changing the structure. The influence of Mn doping on film growth has resulted in an increase in fiber size and roughness. The fiber size values of the films were found to vary from 0.898 µm to 2.960 µm with Mn doping. The study revealed the possibility with Mn doping of controlling, optimizing and improving the morphology in ZnO thin-film production.

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A novel type heterojunction photodiodes formed junctions of Au/LiZnSnO and LiZnSnO/p-Si in series

Cited by 47 publications

References 51 publications

Structural, Electrical and Photoresponse Properties of Si-based Diode with Organic Interfacial Layer Containing Novel Cyclotriphosphazene Compound

Structural, Electrical and Photoresponse Properties of Si-based Diode with Organic Interfacial Layer Containing Novel Cyclotriphosphazene Compound

Graphene–cobalt phthalocyanine based on optoelectronic device for solar panel tracking systems

The Effects of the Mn2+ Ions on the Morphological Properties of Zinc Oxide Thin Films

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