Electric field scanning probe lithography on molecular glass resists using self-actuating, self-sensing cantilever

Advanced electric-field scanning probe lithography on molecular resist using active cantilever

“…Herein, the mechanical stability was simulated by finite element methods and optimized to make the SPL's Z-loop short and most robust, especially due to the integration of a large bottom coarse positioning stage. In contrast to the previous set-up, 20 we decided to go away from a one-arm setup toward a cross-beam (bridge)-like construction (as shown in Fig. 2), in which the optical navigation unit is separated from the SPL mainframe.…”

“…18 Moreover, we have shown sub-5-nm pattern capability of line and dot features, 2,7,16,20 throughput enhancement by combining electric field, current-controlled SPL with electron/EUV lithography, 7 as well as the practical application for pattern transfer by plasma etching. 20 Based on the thermally actuated, piezoresistive cantilever technology, we have developed a compact table-top scanning probe lithography platform for imaging, inspection, alignment, and patterning of features down to a single digit nanoregime. We discuss our recent advances with respect to (a) step-and-repeat SPL, (b) active cantilever for electric-field, current-controlled SPL, and (c) lithographic demonstrations showing sequential read-write cycle patterning combining positive and negative tone writing, patterning over large areas and over existing topography as well as writing of diverse typical features such as line and dots.…”

“…1,2,[16][17][18][19][20][21] Herein, a high nonuniform electric field, which causes a current of low energy electrons between the tip and sample, is applied for direct patterning of the calixarene resist. These low energy electrons (<50 eV), field emitted from the scanning probe tip apex (preliminary simulations provided in Ref.…”

“…[16][17][18][19][20][21] In both lithographic tones, AFM imaging directly after exposure using the same tool and cantilever allows the inspection of the generated features enabling a closed-loop lithography scheme. 18 Moreover, we have shown sub-5-nm pattern capability of line and dot features, 2,7,16,20 throughput enhancement by combining electric field, current-controlled SPL with electron/EUV lithography, 7 as well as the practical application for pattern transfer by plasma etching. 20 Based on the thermally actuated, piezoresistive cantilever technology, we have developed a compact table-top scanning probe lithography platform for imaging, inspection, alignment, and patterning of features down to a single digit nanoregime.…”

“…These low energy electrons (<50 eV), field emitted from the scanning probe tip apex (preliminary simulations provided in Ref. 20), are regulated by the current feedback loop of the SPL system by respective modulations of the tip-sample spacing (described in more detail in Refs. 16 and 17).…”