“…The VCMA effect was also found in solid state systems [15][16][17] and is of significant importance for the electronics industry, as it would enable key technological advances in Magnetic Random Access Memories (MRAM) and spintronics. Until now, research focused primarily on typical perpendicular Magnetic Tunnel Junction (pMTJ) materials, i.e., MgO as a dielectric combined with Co, 18 CoFe, 17,19,20 FeB, 21 or CoFeB, [22][23][24][25] as well as Fe, 16,26 L1 0 FePt, 27 and L1 0 FePd. 28 This work focuses on obtaining PMA onto HfO 2 and provides an explanation for the behavior of the Co ferromagnetic layer in the function of the annealing temperature.…”