Electric Field Modulation of Magnetic Anisotropy in MgO/Co/Pt Structure

Yamada, Keitaro; Kakizakai, Haruka; Shimamura, Kazutoshi; Kawaguchi, Masashi; Fukami, Shunsuke; Ishiwata, N.; Chiba, Daichi; Ono, Teruo

doi:10.7567/apex.6.073004

Cited by 46 publications

(46 citation statements)

References 16 publications

(22 reference statements)

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“…1b) because of the polarization effect2142. Thus, from the perspective of charge accumulation, we note that the directions of the changes in magnetic anisotropy and T C are consistent with our previous results obtained in the Pt/Co system under an applied external electric field8252830.…”

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confidence: 91%

“…R Hall n decreased with μ 0 H || , showing that the magnetization of the sample tilts from being perpendicular to the plane to the in-plane direction. Based on the R Hall n - μ 0 H || curve, the normalized magnetization along the hard axis ( M hard n ) is obtained using the following relationship: M hard n = sin[arccos( R Hall n )](refs 28, 29, 30). The results at 10 K for the three samples are shown in Fig.…”

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confidence: 99%

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Co thin films deposited directly on ZnO polar surfaces

Chiba

Shibata

Tsukazaki

2016

Sci Rep

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A ferromagnetic (FM)-metal/oxide stack is the key structure determining the performance of spintronic devices. However, the effect of the electronic polarity of the oxide on the magnetic properties of the adjacent FM-metal has not been investigated previously. Here, we report the magnetic and structural properties of Co ultra-thin films sputter deposited directly on the Zn- and O-polar surfaces of ZnO substrates. The magnetic anisotropy and Curie temperature exhibit dramatic polarity-dependent differences for films on these surfaces. Structural analyses reveal that the heterointerface of the Co/O-polar surface is rather diffusive, whereas that of the Co/Zn-polar surface is atomically flat. These results suggest that the surface polarity plays a key role in determining the properties of the film. This novel FM-metal/polar-oxide system is expected to add new functionality to spintronic devices and provide an ideal basis for investigating the effect of a built-in electric field on the magnetism in a metallic monolayer.

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confidence: 91%

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confidence: 99%

Co thin films deposited directly on ZnO polar surfaces

Chiba

Shibata

Tsukazaki

2016

Sci Rep

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“…Various studies have been published on electric-field-controlled magnetic effects in recent years, including magnetic domain wall propagation, 1-8 magnetic phase transitions, [9][10][11][12] spin polarization, 13,14 magnetic anisotropy [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32] and exchange bias. [33][34][35][36][37] Electric-field control of perpendicular magnetic anisotropy (PMA) would open up new prospects for the realization of high-density magnetic memory and logic technologies operating at low energy consumption levels.…”

Section: Introductionmentioning

confidence: 99%

“…Attempts to attain this goal have mostly focused on charge accumulation or band shifting in ultrathin ferromagnetic layers with a metal oxide gate dielectric. [15][16][17][18][19][20] In these systems, stable reversal of perpendicular magnetization can be realized when precessional motion of magnetization is triggered by short voltage pulses. 19,20 Giant modulations of PMA have also been obtained by voltage control of oxygen ion migration in metal/metal oxide bilayers.…”

Section: Introductionmentioning

confidence: 99%

Electric-field switching of perpendicularly magnetized multilayers

et al. 2015

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Perpendicularly magnetized layers are used widely for high-density information storage in magnetic hard disk drives and nonvolatile magnetic random access memories. Writing and erasing of information in these devices is implemented by magnetization switching in local magnetic fields or via intense pulses of electric current. Improvements in energy efficiency could be obtained when the reorientation of perpendicular magnetization is controlled by an electric field. Here, we report on reversible electric-field-driven out-of-plane to in-plane magnetization switching in Cu/Ni multilayers on ferroelectric BaTiO 3 at room temperature. Fully deterministic magnetic switching in this hybrid material system is based on efficient strain transfer from ferroelastic domains in BaTiO 3 and the high sensitivity of perpendicular magnetic anisotropy in Cu/Ni to electric-field-induced strain modulations. We also demonstrate that the magnetoelectric coupling effect can be used to realize 180°magnetization reversal if the out-of-plane symmetry of magnetic anisotropy is temporarily broken by a small magnetic field.

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“…The VCMA effect was also found in solid state systems [15][16][17] and is of significant importance for the electronics industry, as it would enable key technological advances in Magnetic Random Access Memories (MRAM) and spintronics. Until now, research focused primarily on typical perpendicular Magnetic Tunnel Junction (pMTJ) materials, i.e., MgO as a dielectric combined with Co, 18 CoFe, 17,19,20 FeB, 21 or CoFeB, [22][23][24][25] as well as Fe, 16,26 L1 0 FePt, 27 and L1 0 FePd. 28 This work focuses on obtaining PMA onto HfO 2 and provides an explanation for the behavior of the Co ferromagnetic layer in the function of the annealing temperature.…”

Section: Introductionmentioning

confidence: 99%