Electric field dependent EL2 capture coefficient in semi-insulating GaAs obtained from propagating high field domains

Piazza, Francesco; Christianen, Peter C. M.; Maan, J.C.

doi:10.1063/1.117618

Cited by 27 publications

(24 citation statements)

References 12 publications

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“…The quantitative measurement of the electric-field profile allows a different approach, in which we evaluate the unknown quantities, including C n (E), using the experimental electric-field distribution as the solution of the set of equations. 26 The steady-state domain apparently is a physically acceptable solution of Eqs. ͑1͒-͑4͒.…”

Section: Free and Trapped Electron Distributionsmentioning

confidence: 99%

“…Thus the mechanism of a configurational barrier due to multiphonon trapping, which is found to require an electric field of only 0.5 kV/cm for the onset of electron capture, is fully consistent with our experimental results. 26 Once C n is known from the experiment over the whole field range, we have used again Eqs. ͑1͒-͑4͒ to evaluate the jϪE relation for the homogeneous electric-field distribution ͑Fig.…”

Section: Trapping Coefficientmentioning

confidence: 99%

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Propagating high-electric-field domains in semi-insulating GaAs:mExperiment and theory

Piazza¹,

Christianen²,

Maan³

1997

Phys. Rev. B

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Semi-insulating GaAs exhibits, at a field of about 1 kV/cm, a strong non-Ohmic conduction and negative differential resistance and is consequently suitable for the investigation of nonlinear systems and deterministic chaos. In this paper we explain both experimentally and theoretically, how the homogeneous electric-field distribution loses its stability in favor of a stable, propagating, high-electric-field domain. Furthermore, we provide detailed information about the microscopic structure of the steady-state domain and we explain that the onset of chaos is related to the interaction between subsequent domains.

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Section: Free and Trapped Electron Distributionsmentioning

confidence: 99%

Section: Trapping Coefficientmentioning

confidence: 99%

Propagating high-electric-field domains in semi-insulating GaAs:mExperiment and theory

Piazza¹,

Christianen²,

Maan³

1997

Phys. Rev. B

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“…This means that the best one can hope for is a qualitative agreement between the results obtained in different samples and that satisfying theories are not easily formulated. Recent experiments [3][4][5][6][7][8][9] that use the electro-optic Pockels effect in order to measure the local electric fields in the sample have opened up the way towards a more detailed quantitative understanding of the domains and the trapping process in SI GaAs. There is a considerable interest in the properties of the EL2 defect because SI GaAs has an increasing relevance, e.g., as a particle detector [10][11][12][13] and for optical data storage.…”

Section: Introductionmentioning

confidence: 99%

Slow domains in semi-insulating GaAs

Neumann

2001

Journal of Applied Physics

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Articles you may be interested inBroadening effects and ergodicity in deep level photothermal spectroscopy of defect states in semi-insulating GaAs: A combined temperature-, pulse-rate-, and time-domain study of defect state kinetics Saturated electric field effect at semi-insulating GaAs-metal junctions studied with a low energy positron beam Semi-insulating GaAs shows current oscillations if a high dc voltage is applied to a sample. These oscillations are caused by traveling high-electric-field domains that are formed as a result of electric-field-enhanced electron trapping. This article describes the various types of experiments that have been carried out with this system, including recent ones that use the electro-optic Pockels effect in order to measure the local electric fields in the sample in a highly accurate manner. An historical overview of the theoretical developments is given and shows that no satisfying theory is currently available. A list of all the required ingredients for a successful theory is provided and the experimental data are explained in a qualitative manner. Furthermore, the main electron trap in semi-insulating GaAs is the native defect EL2, the main properties of which are described.

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“…The SI features of GaAs are produced by deep level defects so that they should play a major role in the LFO, 2 and research has been carried out in order to identify its role. 3,4 In a recent study, we conducted transport measurements on SI GaAs grown by low temperature molecular beam epitaxy ͑LT-MBE͒, and we have shown that hopping conduction occurring in the impurity band of the deep level defects acts as a low propagation barrier for the high mobility free carriers in the band conduction leading to the formation of the electric-field domains due to the accumulation of charge behind the barrier. 5 This mechanism of domain formation allows us to consider, in a first approximation, that the spatial separation of two types of carriers with the slower ones at the domain front leads to the transport characteristics of the domain being dominated by its front.…”

Section: Introductionmentioning

confidence: 99%

Controlling chaos with magnetic field in semi-insulating GaAs

Oliveira¹,

Silva

Moreira

et al. 2007

Phys. Rev. B

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Chaos control has stimulated a large amount of work. We have studied the effect of an external parallel magnetic field on the low-frequency current oscillations observed on a molecular beam epitaxy GaAs sample grown at 265°C, and we have shown that it can be efficiently used for chaos control. The study of the magnetoresistance indicates that the effect of the magnetic field on the charges of the hopping conduction mechanism induces changes in the low-frequency oscillations. Due to this, we have used the magnetic field to control chaos assessed through direct observation low-frequency oscillations, their attractors, and bifurcation diagrams. We also found that the magnetic field interferes indirectly with the Coulombian interaction between the free charges in the conduction band and the hopping carriers, as well as with the recombination mechanism of field enhanced trapping. Controlling the low-frequency oscillations in semi-insulating GaAs by means of an external magnetic field permits probing the interaction of the slow hopping carriers and the fast free carriers in the electric-field domains.

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Electric field dependent EL2 capture coefficient in semi-insulating GaAs obtained from propagating high field domains

Cited by 27 publications

References 12 publications

Propagating high-electric-field domains in semi-insulating GaAs:mExperiment and theory

Propagating high-electric-field domains in semi-insulating GaAs:mExperiment and theory

Slow domains in semi-insulating GaAs

Controlling chaos with magnetic field in semi-insulating GaAs

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