Electric-field dependent conduction mechanisms in crystalline chromia

Kwan, C.-P.; Chen, R.; Singisetti, Uttam; Bird, J. P.

doi:10.1063/1.4915309

Cited by 15 publications

(13 citation statements)

References 29 publications

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“…The electrode diameters range from 45 to 95 μm. The resistivity of 60 nm thick single crystal Cr 2 O 3 is ~ 10 12 cm and comparable to the bulk value 18 (dashed black line 10 12 cm) and is significantly higher than that of the twinned Cr 2 O 3 . When varying the thickness of single crystal Cr 2 O 3 , the leakage current increases with decreasing thickness.…”

Section: Resultsmentioning

confidence: 58%

Bulk-like dielectric and magnetic properties of sub 100 nm thick single crystal Cr2O3 films on an epitaxial oxide electrode

Luo

Novakov

et al. 2020

Sci Rep

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The manipulation of antiferromagnetic order in magnetoelectric Cr2O3 using electric field has been of great interest due to its potential in low-power electronics. The substantial leakage and low dielectric breakdown observed in twinned Cr2O3 thin films, however, hinders its development in energy efficient spintronics. To compensate, large film thicknesses (250 nm or greater) have been employed at the expense of device scalability. Recently, epitaxial V2O3 thin film electrodes have been used to eliminate twin boundaries and significantly reduce the leakage of 300 nm thick single crystal films. Here we report the electrical endurance and magnetic properties of thin (less than 100 nm) single crystal Cr2O3 films on epitaxial V2O3 buffered Al2O3 (0001) single crystal substrates. The growth of Cr2O3 on isostructural V2O3 thin film electrodes helps eliminate the existence of twin domains in Cr2O3 films, therefore significantly reducing leakage current and increasing dielectric breakdown. 60 nm thick Cr2O3 films show bulk-like resistivity (~ 1012 Ω cm) with a breakdown voltage in the range of 150–300 MV/m. Exchange bias measurements of 30 nm thick Cr2O3 display a blocking temperature of ~ 285 K while room temperature optical second harmonic generation measurements possess the symmetry consistent with bulk magnetic order.

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Section: Resultsmentioning

confidence: 58%

Bulk-like dielectric and magnetic properties of sub 100 nm thick single crystal Cr2O3 films on an epitaxial oxide electrode

Luo

Novakov

et al. 2020

Sci Rep

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“…The film was cooled from 320 K to 100 K in magnetic fields 1 or 10 kOe and then measured while warming from 5 K. E max values were adjusted in different temperature ranges in order to achieve a compromise between a low leakage current and a large signal magnitude. Note the thermal activation character of the electrical conductivity in Cr 2 O 3 [22]. Typical ac field amplitude values were 62.4 kV cm leakage currents i max < 10 nA), 31.2 kV cm −1 between 97 K and 150 K (i max < 10 nA), and 6.24 kV cm −1 (i max < 300 nA) or 20 kV cm −1 (i max < 3 μA) at temperatures above 150 K. The largest measurement temperature was limited to 310 K in order to minimize the risk of a dielectric breakdown in the film.…”

Section: Resultsmentioning

confidence: 99%

Magnetoelectric properties of 500-nmCr2O3films

et al. 2016

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The linear magnetoelectric effect was measured in 500-nm Cr 2 O 3 films grown by radio frequency sputtering on Al 2 O 3 substrates between top and bottom thin film Pt electrodes. Magnetoelectric susceptibility was measured directly by applying an alternating current (ac) electric field and measuring the induced ac magnetic moment using superconducting quantum interference device magnetometry. A linear dependence of the induced ac magnetic moment on the ac electric field amplitude was found. The temperature dependence of the magnetoelectric susceptibility agreed qualitatively and quantitatively with prior measurements of bulk single crystals, but the characteristic temperatures of the film were lower than those of single crystals. It was also possible to reverse the sign of the magnetoelectric susceptibility by reversing the sign of the magnetic field applied during cooling through the Néel temperature. A competition between total magnetoelectric and Zeeman energies is proposed to explain the difference between film and bulk Cr 2 O 3 regarding the cooling field dependence of the magnetoelectric effect.

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“…In general, with cobalt film growth on chromia, the cobalt adlayers were seen to form a more uniform film on chromia with a growth temperature below room temperature than with cobalt film growth at room temperature, the latter being the more typical substrate temperature. 1c), indicates that the dielectric properties of the chromia single crystal substrate [33] dominate and neither a conducting surface nor a metallic thin cobalt film, with percolation, exists uniformly across the surface. The cobalt films, grown on chromia at room temperature, probably follow Volmer-Weber or island growth mode, as reported for other cobalt films [22].…”

Section: The Dependence Of the Cobalt Adlayer Morphology On Growth Tementioning

confidence: 99%

Low temperature growth of cobalt on Cr₂O₃(0 0 0 1)

Cao

Zhang

Komesu

et al. 2016

J. Phys.: Condens. Matter

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The thickness and temperature dependence of in situ grown cobalt thin films on Cr2O3(0 0 0 1) single crystalline substrate has been studied by low energy electron microscopy (LEEM). The LEEM images indicate that growth of thin Co films (⩽5 monolayers) on chromia at 100 K tends to be continuous and flat with suppressed island growth compared to films grown on chromia at room temperature and above (to ~440 K). Low energy electron diffraction indicates that disorder builds and crystallinity of the cobalt thin film decreases with increased film thickness. Compared with cobalt thin films on Al2O3(0 0 0 1) single crystalline substrate, cobalt thin films on Cr2O3(0 0 0 1) show larger magnetic contrast in magnetic force microscopy indicating enhancement of perpendicular anisotropy induced by Cr2O3.

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Electric-field dependent conduction mechanisms in crystalline chromia

Cited by 15 publications

References 29 publications

Bulk-like dielectric and magnetic properties of sub 100 nm thick single crystal Cr2O3 films on an epitaxial oxide electrode

Bulk-like dielectric and magnetic properties of sub 100 nm thick single crystal Cr2O3 films on an epitaxial oxide electrode

Magnetoelectric properties of 500-nmCr2O3films

Low temperature growth of cobalt on Cr₂O₃(0 0 0 1)

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Electric-field dependent conduction mechanisms in crystalline chromia

Cited by 15 publications

References 29 publications

Bulk-like dielectric and magnetic properties of sub 100 nm thick single crystal Cr2O3 films on an epitaxial oxide electrode

Bulk-like dielectric and magnetic properties of sub 100 nm thick single crystal Cr2O3 films on an epitaxial oxide electrode

Magnetoelectric properties of 500-nmCr2O3films

Low temperature growth of cobalt on Cr2O3(0 0 0 1)

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Low temperature growth of cobalt on Cr₂O₃(0 0 0 1)