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The growth of microcrystalline silicon oxide thin films studied by in situ plasma diagnostics

“…9,10 Moreover, lc-SiO x :H can be deposited by conventional plasma-enhanced chemical vapor deposition (PECVD) in industrial processes on large area. 2,11 Microcrystalline silicon oxide is a two phase material consisting of lc-Si:H and a-SiO x :H. 12 Energy filtered transmission electron microscopy (EF-TEM) studies have shown recently that the crystalline growth is strongly directional leading to crystalline silicon columns of only a few nanometers in diameter within an a-SiO x :H matrix. 3 It is believed that n-or p-type doping is realized by doping of the lc-Si:H phase with phosphorous or boron, respectively.…”

Poly‐SiOx Passivating Contacts with Plasma‐Assisted N2O Oxidation of Silicon (PANO‐SiOx)

“…This is because dissociation energy required to split off the O from the CO 2 molecule was lower than the energy required to dissociate the C─O bond, resulting in oxygen-rich film and CO molecule being pumped out of the chamber. [73][74][75] The plasma power was set at 5 W. The deposition pressure was set at 1 mbar. 180 °C substrate temperature was used during the PECVD deposition.…”

Versatility of Nanocrystalline Silicon Films: from Thin-Film to Perovskite/c-Si Tandem Solar Cell Applications

“…As the light passes the entire layer stack several times due to light scattering, a significant optical loss originates from parasitic absorption in the doped layers. By adding oxygen-containing gas, usually CO 2 , to the PECVD process, nc-SiO x :H films with reduced absorption, low refractive index but still high (transversal) conductivity were obtained [6][7][8][9][10]. Tuning the refractive index by controlling the oxygen content opened the path for advanced applications in multijunction cells, e.g., as an intermediate reflecting layer between the two subcells [11][12][13][14], and building more complex multiple junction device [15].…”