Efficient spin transfer torque in La2/3Sr1/3MnO3 nanostructures

Foerster, Michael; Peña, Luis Fabián; Vaz, C. A. F.; Heinen, Jan; Finizio, Simone; Schulz, Thorsten; Bisig, André; Büttner, Felix; Eisebitt, Stefan; Méchin, Laurence; Hühn, S.; Moshnyaga, V.; Kläui, Mathias

doi:10.1063/1.4865415

Cited by 10 publications

(8 citation statements)

References 29 publications

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“…This value is similar to the 0.16% magnetoresistance found in curved 2 micron wide LSMO wires, which was also ascribed to domain walls and discussed in terms of AMR. [17] We next discuss the physical origin of the large magnetoresistance measured for 180 and 65 nm wide wires and ascribed to the presence of domain walls. Interesting insights can be obtained from the scaling of the magnetoresistance with the geometry of the domain wall.…”

Section: Resultsmentioning

confidence: 99%

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Large Magnetoresistance of Isolated Domain Walls in La_2/3Sr_1/3MnO₃ Nanowires

et al. 2023

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Generation, manipulation, and sensing of magnetic domain walls are cornerstones in the design of efficient spintronic devices. Half‐metals are amenable for this purpose as large low field magnetoresistance signals can be expected from spin accumulation at spin textures. Among half metals, La1−xSrxMnO3 (LSMO) manganites are considered as promising candidates for their robust half‐metallic ground state, Curie temperature above room temperature (Tc = 360 K, for x = 1/3), and chemical stability. Yet domain wall magnetoresistance is poorly understood, with large discrepancies in the reported values and conflicting interpretation of experimental data due to the entanglement of various source of magnetoresistance, namely, spin accumulation, anisotropic magnetoresistance, and colossal magnetoresistance. In this work, the domain wall magnetoresistance is measured in LSMO cross‐shape nanowires with single‐domain walls nucleated across the current path. Magnetoresistance values above 10% are found to be originating at the spin accumulation caused by the mistracking effect of the spin texture of the domain wall by the conduction electrons. Fundamentally, this result shows the importance on non‐adiabatic processes at spin textures despite the strong Hund coupling to the localized t2g electrons of the manganite. These large magnetoresistance values are high enough for encoding and reading magnetic bits in future oxide spintronic sensors.

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Section: Resultsmentioning

confidence: 99%

“…This value is similar to the 0.16% magnetoresistance found in curved 2 micron wide LSMO wires, which was also ascribed to domain walls and discussed in terms of AMR. [ 17 ]…”

Section: Resultsmentioning

confidence: 99%

Large Magnetoresistance of Isolated Domain Walls in La_2/3Sr_1/3MnO₃ Nanowires

et al. 2023

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“…Compared with 3d transition metals, complex oxides such as La 0.7 Sr 0.3 MnO 3 [52][53][54] inherently exhibit a high spin polarization P [55] and a low saturation magnetization M s , which is promising for applications of current-driven DW motion, due to a spin-torque efficiency that scales as P/M s . [56] In 2014, Foerster et al [57] studied the interaction between spin-polarized current and magnetization on La 2/3 Sr 1/3 MnO 3 (LSMO) nanowires with in-plane anisotropy using low temperature magneto-transport method. A magnetic domain wall was nucleated in the area between the electrical contacts of the ring structure indicated by higher resistance for angles between 10 • and 25 • , as shown in Fig.…”

Section: The Spin Polarized Current-induced Magnetic Domain-wall (Dw)...mentioning

confidence: 99%

Nanoscale control of low-dimensional spin structures in manganites

Wang¹,

Malik²,

Liang³

et al. 2016

Chinese Phys. B

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Due to the upcoming demands of next-generation electronic/magnetoelectronic devices with low-energy consumption, emerging correlated materials (such as superconductors, topological insulators and manganites) are one of the highly promising candidates for the applications. For the past decades, manganites have attracted great interest due to the colossal magnetoresistance effect, charge-spin-orbital ordering, and electronic phase separation. However, the incapable of deterministic control of those emerging low-dimensional spin structures at ambient condition restrict their possible applications. Therefore, the understanding and control of the dynamic behaviors of spin order parameters at nanoscale in manganites under external stimuli with low energy consumption, especially at room temperature is highly desired. In this review, we collected recent major progresses of nanoscale control of spin structures in manganites at low dimension, especially focusing on the control of their phase boundaries, domain walls as well as the topological spin structures (e.g., skyrmions). In addition, capacitor-based prototype spintronic devices are proposed by taking advantage of the above control methods in manganites. This capacitor-based structure may provide a new platform for the design of future spintronic devices with low-energy consumption.

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“…Pure electrical manipulation of magnetization rotation in magnetic devices is a desirable way for spintronic applications, which is suitable for the scaling of devices in the integrated circuit. To date, there have been multiple types of electrical manipulation ways of the magnetization rotation or magnetic anisotropy variation, such as spin-orbit torque (SOT), [1][2][3][4][5][6][7] spin transfer torque (STT), [8][9][10][11] magneto-electrical coupling (MEC) effect, [12][13][14][15][16][17] and strain. [18][19][20][21][22][23][24][25] The piezo-voltage-induced strain, as a way of voltage-controlled magnetic anisotropy (VCMA), has attracted the attention of many researchers due to the performance of low-power consumption.…”

Section: Introductionmentioning

confidence: 99%