Efficient ITO–Si solar cells and power modules fabricated with a low temperature technology: Results and perspectives

Efficient Silicon Solar Cells Fabricated with a Low Cost Spray Technique

“…Recently, a detailed theoretical modelling of the ITO/n-Si solar cells has been reported (Malik et al, 2008). Based on these published results, here we show the most important conclusions; further details can be consulted in that work.…”

“…The problem now is to find the range of resistivity of the silicon substrate on which the p-n theory can be applied to the ITO/n-Si heterojunction with extremely high potential barrier. Based on results published recently (Malik et al, 2008), the condition for strong inversion in the ITO/n-Si heterojunction requires that…”

“…Figure 14 (Malik et al, 2008) junctions. With the potential barrier height of 0.9 eV achieved in this work, the structures may be considered as a symmetrical p-n ( .…”

“…where q is the electron charge, W is the depletion width in the silicon substrate, and R(λ) is the spectral reflectance from the ITO/Si interface calculated from the optical constants of silicon and ITO (Malik et al, 2008). The spectral distribution F λ of the solar radiation, which are related to the AM0 (136 mW/cm 2 ) and AM1.5 (100 mW/cm 2 ) conditions, have been used in the calculations according to the 2000 ASTME-490-00 and ASTM G-173-03 standards, respectively.…”

Solar Cells on the Base of Semiconductor-Insulator-Semiconductor Structures

“…The diode and photovoltaic properties of these structures are very similar, but the conversion efficiency of ITO/nSi is higher, up to 11-13%, whereas for SnO 2 /nSi these values do not exceed 7.2% (Nagatomo et al, 1979). As is reported in the paper (Malik et al, 2008;Malik et al, 2009), the authors fabricated ITO/nSi solar cells using n-type single crystalline silicon wafers with a 10Ohm·cm resistivity and an 80nm thick ITO film with a sheet resistance of 30Ohm/□ that was deposited by spray pyrolysis on the silicon substrate treated in the H 2 O 2 solution. This ITO thickness was chosen in order to obtain an effective antireflection action of the film.…”