Efficient electron emitter utilizing boron-doped diamond tips with sp2 content

Wisitsoraat, Anurat; Kang, W.P.; Davidson, J.L.; Li, Q; Xu, Jianbin; Kerns, D.V.

doi:10.1016/s0169-4332(99)00058-6

Cited by 30 publications

(12 citation statements)

References 12 publications

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“…[70][71][72] In doping of carbon materials, the most commonly used dopants are boron and nitrogen since they can easily replace carbon atoms during the growth process. Boron is known to be p-type dopant so that it decreases the emission current.…”

Section: Doping Of Carbon Nanotubesmentioning

confidence: 99%

Field Emission and Application of Carbon Nanotubes

Lim

Lee

et al. 2007

NANO

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The mechanism of field emission from a metal surface was well explained based on the quantum mechanics in early 20th century. Since then, various materials have been studied for field emitters. However, so far, we have been using only limited materials as a field emitter and an application in some area requires further scientific understandings and technological advancements. In this paper, we review the current status of researches in field emission and emission phenomena of carbon nanotubes (CNTs). This may include current saturation induced by gas adsorbates, screening effects, high current emission, degradation of emitter, and field enhancement factor. We also introduce the present status in the development of various CNT-based field emission devices and discuss their performances. In this part, various potential applications such as field emission display, ionization gauge, X-ray gun, and lamp will be presented. Keywords: Carbon nanotubes; field emission. 69 NANO 2007.02:69-89. Downloaded from www.worldscientific.com by NORTHWESTERN UNIVERSITY on 03/25/15. For personal use only. 70 S. C. Lim et al. NANO 2007.02:69-89. Downloaded from www.worldscientific.com by NORTHWESTERN UNIVERSITY on 03/25/15. For personal use only. Field Emission and Application of Carbon Nanotubes 71 NANO 2007.02:69-89. Downloaded from www.worldscientific.com by NORTHWESTERN UNIVERSITY on 03/25/15. For personal use only. 72 S. C. Lim et al.

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Section: Doping Of Carbon Nanotubesmentioning

confidence: 99%

Field Emission and Application of Carbon Nanotubes

Lim

Lee

et al. 2007

NANO

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“…1 Its electron emission properties depend on several factors, such as the work function, grain boundaries, 2 and small protuberances. [3][4][5][6][7] For example, it has been shown that the boundaries between grains, sites rich in sp 2 hybridization, emit electrons more easily than the diamond facets of boron-doped diamond ͑BDD͒ polycrystalline films. 7 Interestingly, despite boron being an acceptor state in diamond it appears to enhance the electron emission properties of the material.…”

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confidence: 99%

Electron field emission from composite electrodes of carbon nanotubes-boron-doped diamond and carbon felts

Rosolen

Tronto

Marchesin

et al. 2006

Applied Physics Letters

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The electron field emission of carbon nanotube ͑CNT͒/boron-doped diamond ͑BDD͒/carbon felt electrodes ͑CNT/BDD/felt͒ have been investigated. The composite electrode was initially prepared with the growth of BDD on carbon felt and the subsequent growth of CNT by chemical decomposition of methanol. The composite electrodes were characterised using scanning electron microscopy and transmission electron microscopy. For the CNT/BDD/felt samples, the electron field emission was observed at macroscopic fields as low as 1.1 V m −1 . The emission current versus time plot shows significant potential for future field emission applications. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2178247͔ Diamond thin films are a class of carbon materials that have been used for electron field emission devices since 1991. 1 Its electron emission properties depend on several factors, such as the work function, grain boundaries, 2 and small protuberances. [3][4][5][6][7] For example, it has been shown that the boundaries between grains, sites rich in sp 2 hybridization, emit electrons more easily than the diamond facets of boron-doped diamond ͑BDD͒ polycrystalline films. 7 Interestingly, despite boron being an acceptor state in diamond it appears to enhance the electron emission properties of the material. We believe this is based on the substrate playing an important role in the emission process of diamond films. In fact, it has been observed that better emission results from chemical vapor deposited diamond films grown on SnO 2 instead of silicon, suggesting that the electron supply layer or substrates plays an active role in the emission process. 8 However, despite the well-known attractive properties of diamond ͑negative electron affinity, thermal, mechanical, and chemical inertness͒, there are still several problems in the production of field emission devices based on this material associated with obtaining high current densities from emitters, obtaining uniform microstructures, etc., which affect long-term stability. 9 In addition, diamond films, as well as other carbon materials which have been used for emission, are subject to thermal effects at the interface between the substrate and the carbon film. The presence of heating at the interface of the film and substrate generates different mechanical stresses on the film. This will increase the resistance and/or the voltage barrier needed to maintain electron emission at low voltages for an extended periods of time.In order to circumvent the above problem, we present here an approach based on a combination of carbon nanotubes ͑CNTs͒ and BDD films mounted on a carbon felt to obtain reproducible electron emission at low fields. BDD mounts on a carbon felt have previously been explored for electrochemical applications. 10,11 CNTs grown on BDD films, as described in this letter, is a further interesting technique to increase its potential uses.The felt substrate was obtained from carbonization of polyacrinitrile at 2000°C. The obtained carbon fibers have a diameter of around 10...

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“…The reduction in grain size leads to increase in grain boundary volume fraction composed primarily of graphite in bulk deposited film. Our previous work has shown, with the aid of cascaded Fmetal -insulator-metal_, Fsp 2 -sp 3 -sp 2 _, model that increasing the graphitic content of the diamond film helps to reduce the turn-on field by decreasing the tunneling distance for electrons to reach the diamond -vacuum interface [13]. Higher graphitic content in nitrogen-incorporated diamond film as compared to that in diamond film deposited using hydrogenmethane plasma further enhances field emission characteristics.…”

Section: Resultsmentioning

confidence: 98%