Grain boundaries in graphene are formed by the joining of islands during the initial growth stage, and these boundaries govern transport properties and related device performance. Although information on the atomic rearrangement at graphene grain boundaries can be obtained using transmission electron microscopy and scanning tunnelling microscopy, large-scale information regarding the distribution of graphene grain boundaries is not easily accessible. Here we use optical microscopy to observe the grain boundaries of large-area graphene (grown on copper foil) directly, without transfer of the graphene. This imaging technique was realized by selectively oxidizing the underlying copper foil through graphene grain boundaries functionalized with O and OH radicals generated by ultraviolet irradiation under moisture-rich ambient conditions: selective diffusion of oxygen radicals through OH-functionalized defect sites was demonstrated by density functional calculations. The sheet resistance of large-area graphene decreased as the graphene grain sizes increased, but no strong correlation with the grain size of the copper was revealed, in contrast to a previous report. Furthermore, the influence of graphene grain boundaries on crack propagation (initialized by bending) and termination was clearly visualized using our technique. Our approach can be used as a simple protocol for evaluating the grain boundaries of other two-dimensional layered structures, such as boron nitride and exfoliated clays.

In spite of recent successful demonstrations of flexible and transparent graphene heaters, the underlying heat‐transfer mechanism is not understood due to the complexity of the heating system. Here, graphene/glass defoggers are fabricated and the dynamic response of the temperature as a function of input electrical power is measured. The graphene/glass defoggers reveal shorter response times than Cr/glass defoggers. Furthermore, the saturated temperature of the graphene/glass defoggers is higher than for Cr/glass defoggers at a given input electrical power. The observed dynamic response to temperature is well‐fitted to the power‐balance model. The response time of graphene/glass defogger is shorter by 44% than that of the Cr/glass defogger. The convective heat‐transfer coefficient of graphene is 12.4 × 10−4 W cm−2 °C−1, similar to that of glass (11.1 × 10−4 W cm−2 °C−1) but smaller than that of chromium (17.1 × 10−4 W cm−2 °C−1). The graphene‐based system reveals the lowest convective heat‐transfer coefficient due to its ideal flat surface compared to its counterparts of carbon nanotubes (CNTs) and reduced graphene oxide (RGO)‐based systems.

Despite numerous studies on two-dimensional van der Waals heterostructures, a full understanding of the charge transport and photoinduced current mechanisms in these structures, in particular, associated with charge depletion/inversion layers at the interface remains elusive. Here, we investigate transport properties of a prototype multilayer MoS/WSe heterojunction via a tunable charge inversion/depletion layer. A charge inversion layer was constructed at the surface of WSe due to its relatively low doping concentration compared to that of MoS, which can be tuned by the back-gate bias. The depletion region was limited within a few nanometers in the MoS side, while charges are fully depleted on the whole WSe side, which are determined by Raman spectroscopy and transport measurements. Charge transport through the heterojunction was influenced by the presence of the inversion layer and involves two regimes of tunneling and recombination. Furthermore, photocurrent measurements clearly revealed recombination and space-charge-limited behaviors, similar to those of the heterostructures built from organic semiconductors. This contributes to research of various other types of heterostructures and can be further applied for electronic and optoelectronic devices.

Semiconducting transition metal dichalcogenides (TMDs) are promising materials for photodetection over a wide range of visible wavelengths. Photodetection is generally realized via a phototransistor, photoconductor, p-n junction photovoltaic device, and thermoelectric device. The photodetectivity, which is a primary parameter in photodetector design, is often limited by either low photoresponsivity or a high dark current in TMDs materials. Here, we demonstrated a highly sensitive photodetector with a MoS/h-BN/graphene heterostructure, by inserting a h-BN insulating layer between graphene electrode and MoS photoabsorber, the dark-carriers were highly suppressed by the large electron barrier (2.7 eV) at the graphene/h-BN junction while the photocarriers were effectively tunneled through small hole barrier (1.2 eV) at the MoS/h-BN junction. With both high photocurrent/dark current ratio (>10) and high photoresponsivity (180 AW), ultrahigh photodetectivity of 2.6 × 10 Jones was obtained at 7 nm thick h-BN, about 100-1000 times higher than that of previously reported MoS-based devices.

Layered hexagonal boron nitride (h-BN) thin film is a dielectric that surpasses carrier mobility by reducing charge scattering with silicon oxide in diverse electronics formed with graphene and transition metal dichalcogenides. However, the h-BN effect on electron doping concentration and Schottky barrier is little known. Here, we report that use of h-BN thin film as a substrate for monolayer MoS can induce ∼6.5 × 10 cm electron doping at room temperature which was determined using theoretical flat band model and interface trap density. The saturated excess electron concentration of MoS on h-BN was found to be ∼5 × 10 cm at high temperature and was significantly reduced at low temperature. Further, the inserted h-BN enables us to reduce the Coulombic charge scattering in MoS/h-BN and lower the effective Schottky barrier height by a factor of 3, which gives rise to four times enhanced the field-effect carrier mobility and an emergence of metal-insulator transition at a much lower charge density of ∼1.0 × 10 cm (T = 25 K). The reduced effective Schottky barrier height in MoS/h-BN is attributed to the decreased effective work function of MoS arisen from h-BN induced n-doping and the reduced effective metal work function due to dipole moments originated from fixed charges in SiO.