2013
DOI: 10.1002/pssc.201300008
|View full text |Cite
|
Sign up to set email alerts
|

Efficient 2.1‐μm lasers based on Tm3+:Lu2O3 ceramics pumped by 800–nm laser diodes

Abstract: Structural, optical and spectroscopic properties of Tm3+:Lu2O3 ceramics were studied. CW laser operation at 2068 nm with an output power of up to 34 W and a slope efficiency of 44% was obtained. Q‐switched ocsilation with a pulse duration of 100‐150 ns and a repetition rate of 1‐10 kHz was achieved. Passive mode locking was achieved using an ion‐implanted InGaAsSb quantum‐well based SESAM or single graphene layer. Transform‐limited pulses as short as 180 fs are generated at 2076 nm with an average output power… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4

Citation Types

0
7
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 19 publications
(7 citation statements)
references
References 0 publications
0
7
0
Order By: Relevance
“…The Tm 3+ ions have a number absorption bands in near-IR wavelength region and can be pumped at ~800 nm (the 3 H6 -3 H4 transition band), ~1200 nm (the 3 H6 -3 H5 transition band) or ~1700 nm (the 3 H6 -3 F4 transition band) for 1800-2300 nm lasing (Figure 1) [1][2][3][4]10]. the absorption cross section of Tm 3+ :Lu2O3 ceramics (c) [18].…”
Section: In-band Pumping Schemes Of Tm 3+ -And Ho 3+ -Doped Laser Cry...mentioning
confidence: 99%
See 4 more Smart Citations
“…The Tm 3+ ions have a number absorption bands in near-IR wavelength region and can be pumped at ~800 nm (the 3 H6 -3 H4 transition band), ~1200 nm (the 3 H6 -3 H5 transition band) or ~1700 nm (the 3 H6 -3 F4 transition band) for 1800-2300 nm lasing (Figure 1) [1][2][3][4]10]. the absorption cross section of Tm 3+ :Lu2O3 ceramics (c) [18].…”
Section: In-band Pumping Schemes Of Tm 3+ -And Ho 3+ -Doped Laser Cry...mentioning
confidence: 99%
“…The mature high power laser diodes around 800 nm can be used as the pump sources via the 3 H6→ 3 H4 transition with the subsequent cross relaxation ( 3 H4, 3 H6) → ( 3 F4, 3 F4) of the Tm 3+ ions with the phonon assistance. This pumping scheme has been realized for different Tm 3+ -doped laser crystals and ceramics [1,10,18,19]. The optically-pumped semiconductor laser at 1200 nm provided the 3 H6→ 3 H4 transition was also used for the Tm 3+ -doped ceramics pumping [20].…”
Section: In-band Pumping Schemes Of Tm 3+ -And Ho 3+ -Doped Laser Cry...mentioning
confidence: 99%
See 3 more Smart Citations