Efficiency enhancement of CIGS solar cell by WS2 as window layer through numerical modelling tool

Sobayel, K.; Shahinuzzaman, M.; Amin, Nowshad; Karim, Mohammad Rezaul; Dar, Mushtaq Ahmad; Gul, R.; Alghoul, M. A.; Sopian, Kamaruzzaman; Arslanoğlu, Hasan; Akhtaruzzaman, Md.

doi:10.1016/j.solener.2020.07.007

Cited by 74 publications

(45 citation statements)

References 39 publications

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“…Besides the experimental study, the simulation environment provides a power full tool to better understand about the physical behavior of different optoelectronic properties of any solar cell. In relation to the electrical simulation, the software like the Solar Cell Capacitance Simulator (SCAPS-1D) [ 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 ] was used, which basically works on two basic semiconductor equations, including, the Poisson equation and the continuity equation of electrons and holes under steady-state condition.…”

Section: Device Structure and Simulation Parametersmentioning

confidence: 99%

Defect Study and Modelling of SnX3-Based Perovskite Solar Cells with SCAPS-1D

et al. 2021

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Recent achievements, based on lead (Pb) halide perovskites, have prompted comprehensive research on low-cost photovoltaics, in order to avoid the major challenges that arise in this respect: Stability and toxicity. In this study, device modelling of lead (Pb)-free perovskite solar cells has been carried out considering methyl ammonium tin bromide (CH3NH3SnBr3) as perovskite absorber layer. The perovskite structure has been justified theoretically by Goldschmidt tolerance factor and the octahedral factor. Numerical modelling tools were used to investigate the effects of amphoteric defect and interface defect states on the photovoltaic parameters of CH3NH3SnBr3-based perovskite solar cell. The study identifies the density of defect tolerance in the absorber layer, and that both the interfaces are 1015 cm−3, and 1014 cm−3, respectively. Furthermore, the simulation evaluates the influences of metal work function, uniform donor density in the electron transport layer and the impact of series resistance on the photovoltaic parameters of proposed n-TiO2/i-CH3NH3SnBr3/p-NiO solar cell. Considering all the optimization parameters, CH3NH3SnBr3-based perovskite solar cell exhibits the highest efficiency of 21.66% with the Voc of 0.80 V, Jsc of 31.88 mA/cm2 and Fill Factor of 84.89%. These results divulge the development of environmentally friendly methyl ammonium tin bromide perovskite solar cell.

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Section: Device Structure and Simulation Parametersmentioning

confidence: 99%

Defect Study and Modelling of SnX3-Based Perovskite Solar Cells with SCAPS-1D

et al. 2021

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“…Fundamentally, SCAPS-1D solves three sets of equations, Poisson's equation, hole continuity, and electron continuity under the constraint of boundary conditions. These three equations are shown below [38][39][40]:…”

Section: Numerical Simulation and Device Structurementioning

confidence: 99%

Design and Optimize the Performance of Self-Powered Photodetector Based on PbS/TiS3 Heterostructure by SCAPS-1D

Yao

Liu

2022

Nanomaterials

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Titanium trisulphide (TiS3) has been widely used in the field of optoelectronics owing to its superb optical and electronic characteristics. In this work, a self-powered photodetector using bulk PbS/TiS3 p-n heterojunction is numerically investigated and analyzed by a Solar Cell Capacitance Simulator in one-Dimension (SCAPS-1D) software. The energy bands, electron-holes generation or recombination rate, current density-voltage (J-V), and spectral response properties have been investigated by SCAPS-1D. To improve the performance of photodetectors, the influence of thickness, shallow acceptor or donor density, and defect density are investigated. By optimization, the optimal thickness of the TiS3 layer and PbS layer are determined to be 2.5 μm and 700 nm, respectively. The density of the superior shallow acceptor (donor) is 1015 (1022) cm−3. High quality TiS3 film is required with the defect density of about 1014 cm−3. For the PbS layer, the maximum defect density is 1017 cm−3. As a result, the photodetector based on the heterojunction with optimal parameters exhibits a good photoresponse from 300 nm to 1300 nm. Under the air mass 1.5 global tilt (AM 1.5G) illuminations, the optimal short-circuit current reaches 35.57 mA/cm2 and the open circuit voltage is about 870 mV. The responsivity (R) and a detectivity (D*) of the simulated photodetector are 0.36 A W−1 and 3.9 × 1013 Jones, respectively. The simulation result provides a promising research direction to further broaden the TiS3-based optoelectronic device.

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“…We have considered the good structure of solar cells based on CIGS (Mo/CIGS/CdS/ZnO). The typical thickness of each layer was obtained from different references and substituted the CdS with the experimental results of Cd 1−x Zn x S [13][14][15][16]. In the experimental simulation, the illumination condition is 1000 W/m 2 , T = 300 K. Defect type is set to Neutral, energy level concerning reference is 0.6, and characteristic energy is 0.1 eV.…”

Section: Numerical Simulationmentioning

confidence: 99%

“…The lattice constant a( Å) of cubic CdS is 5.818, and the lattice constant a( Å) of hexagonal CdS is 4.141 [12]. The hexagonal lattice mismatch between Cd 1−x Zn x S and CIGS in the hexagonal lattice is too large, the interfacial state density is as high as 10 14 , and the lattice mismatch rate is as high as 33.23% [12][13][14][15][16]. Compared with the reference, the cubic Cd 1−x Zn x S is more compatible with CIGS than the cubic CdS.…”

Section: Lattice Mismatches and Interfacial Densities Of Heterojunctionsmentioning

confidence: 99%

Chemical Bath Deposition of Cd1−xZnxS as Buffer Layer in CIGS Solar Cell

Xue

Wang

Zhang

et al. 2021

DGAEJ

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Cd1-xZnxS thin films were deposited on glass substrates by chemical bath deposition (CBD). The effect of ZnSO4 solution concentration on the properties of the thin films was analyzed. The concentration of ZnSO4 solution affects the deposition rate of Cd1-xZnxS thin films. When the deposition rate is low, Cd1-xZnxS cubic crystal phase is formed. The surface morphology of hexagonal Cd1-xZnxS thin films is denser than that of cubic phase, the lattice mismatch rate of cubic phase Cd1-xZnxS thin films and CIGS is lower, only 0.56%, the interfacial state density is lower. SCAPS software was used to simulate the performance of the buffer layer, and the conversion efficiency of the cubic phase Cd1-xZnxS buffer layer in CIGS Solar Cell was up to 23.50%. Based on the EDS results, the function relationship between the contents of Zn2+ and Cd2+ in the films and the band gap content was deduced.

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Efficiency enhancement of CIGS solar cell by WS2 as window layer through numerical modelling tool

Cited by 74 publications

References 39 publications

Defect Study and Modelling of SnX3-Based Perovskite Solar Cells with SCAPS-1D

Defect Study and Modelling of SnX3-Based Perovskite Solar Cells with SCAPS-1D

Design and Optimize the Performance of Self-Powered Photodetector Based on PbS/TiS3 Heterostructure by SCAPS-1D

Chemical Bath Deposition of Cd1−xZnxS as Buffer Layer in CIGS Solar Cell

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