Defect Study and Modelling of SnX3-Based Perovskite Solar Cells with SCAPS-1D

Abstract

Recent achievements, based on lead (Pb) halide perovskites, have prompted comprehensive research on low-cost photovoltaics, in order to avoid the major challenges that arise in this respect: Stability and toxicity. In this study, device modelling of lead (Pb)-free perovskite solar cells has been carried out considering methyl ammonium tin bromide (CH3NH3SnBr3) as perovskite absorber layer. The perovskite structure has been justified theoretically by Goldschmidt tolerance factor and the octahedral factor. Numerical modelling tools were used to investigate the effects of amphoteric defect and interface defect states on the photovoltaic parameters of CH3NH3SnBr3-based perovskite solar cell. The study identifies the density of defect tolerance in the absorber layer, and that both the interfaces are 1015 cm−3, and 1014 cm−3, respectively. Furthermore, the simulation evaluates the influences of metal work function, uniform donor density in the electron transport layer and the impact of series resistance on the photovoltaic parameters of proposed n-TiO2/i-CH3NH3SnBr3/p-NiO solar cell. Considering all the optimization parameters, CH3NH3SnBr3-based perovskite solar cell exhibits the highest efficiency of 21.66% with the Voc of 0.80 V, Jsc of 31.88 mA/cm2 and Fill Factor of 84.89%. These results divulge the development of environmentally friendly methyl ammonium tin bromide perovskite solar cell.

Effect of Various Electron and Hole Transport Layers on the Performance of CsPbI3-Based Perovskite Solar Cells: A Numerical Investigation in DFT, SCAPS-1D, and wxAMPS Frameworks

“…The slope of 1/ C 2 (V) is interpreted as the concentration of inhabited trapping centers, even though the results are lower than anticipated due to the different electrode work functions. 86 For every device in this work, with the increase in applied voltage values, the MS values got lowered, which is similar to the previous studies. 86 , 87 …”

“… 86 For every device in this work, with the increase in applied voltage values, the MS values got lowered, which is similar to the previous studies. 86 , 87 …”

“…The MS theory is primarily based on the characteristics of the p–n junction, where the x -axis intercept typically represents the V bi of the semiconductor devices. The slope of 1/ C 2 (V) is interpreted as the concentration of inhabited trapping centers, even though the results are lower than anticipated due to the different electrode work functions . For every device in this work, with the increase in applied voltage values, the MS values got lowered, which is similar to the previous studies. , …”

Design and Numerical Investigation of a Lead-Free Inorganic Layered Double Perovskite Cs4CuSb2Cl12 Nanocrystal Solar Cell by SCAPS-1D

“…Similarly, the HTL is also chosen from often used materials in PSCs, e.g., P3HT, PEDOT:PSS, Spiro-OMETAD, Cu 2 O, and CuI. Tables 1 and 2 include the basic parameters of the ETL, HTL and CCSC-NCs, which were extracted from the previously published literature [19][20][21]25,26,[32][33][34][35][36][37][38][39][40]. The bulk defect parameters in the absorber layer and the interface defect parameters at ETL/Absorber and Absorber/HTL interfaces are presented in Table 3.…”

Antisolvent Engineering to Enhance Photovoltaic Performance of Methylammonium Bismuth Iodide Solar Cells

“…For the perovskite active layer, the crystal-structure transition is seen as an important factor that could affect stability. In this point of view, based on Goldschmidt tolerance factors and octahedral factors, multiple potential alternatives were selected, such as tin [ 12 , 13 ], strontium [ 14 , 15 ], barium [ 16 , 17 ], and bismuth [ 18 , 19 ]. Tin-based perovskite material has gained immense consideration due to its comparable optoelectronic properties to lead-based perovskite.…”