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The CIGS thin films are prepared by co-evaporation of elemental In, Ga and Se on the substrates of Mo-coated glasses at 400°C followed by co-evaporation of elemental Cu and Se at 550°C. We study the structural and electrical properties using XRD, XRF and Hall effect measurements. In general, Cu(In,Ga) 5 Se 8 phase exists when Cu/(In+Ga) ratio is from 0.17 to 0.27, Cu(In,Ga) 3 Se 5 phase exists for Cu/(In+Ga) ratio between 0.27 and 0.41, Cu 2 (In,Ga) 4 Se 7 and Cu(In,Ga) 2 Se 3.5 phases exist for Cu/(In+Ga) ratio between 0.41 and 0.61, and OVC(or ODC) and CuIn 0.7 Ga 0.3 Se 2 phases exist when Cu/(In+Ga) ratio is from 0.61 to 0.88. With the increase of Cu/(In+Ga) ratio, the carrier concentrations of the films gradually increase, but the electrical resistivity gradually decreases.

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Cd1– x Zn x S thin films were deposited by chemical bath deposition (CBD) on the glass substrate to study the influence of cadmium sulfate concentration on the structural characteristics of the thin film. The SEM results show that the thin film surfaces under the cadmium sulfate concentration of 0.005 M exhibit better compactness and uniformity. The distribution diagrams of thin film elements illustrate the film growth rate changes on the trend of the increase, decrease, and increase with the increase of cadmium sulfate concentration. XRD studies exhibit the crystal structure of the film is the hexagonal phase, and there are obvious diffraction peaks and better crystallinity when the concentration is 0.005 M. Spectrophotometer test results demonstrate that the relationship between zinc content x and optical band gap value E g can be expressed by the equation E g(x) = 0.59x 2 + 0.69x + 2.43. Increasing the zinc content can increase the optical band gap, and the absorbance of the thin film can be improved by decreasing the cadmium sulfate concentration, however, all of them have good transmittance. At a concentration of 0.005 M, the thin film has good absorbance in the 300–800 nm range, 80% transmittance, and band gap value of 3.24 eV, which is suitable for use as a buffer layer for solar cells.

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