Design and preparation of integrated voltage divider for silicon drift detector by ion implantation

Liu, Sai; Xue, Yuming; Jia, Rui; Tao, Ke; Jiang, Shuai; Wu, Yiqing; Sun, Haoyu; Guo, Qing; Zhang, Liming; Feng, Shiping

doi:10.1007/s10854-019-01351-8

Cited by 3 publications

(3 citation statements)

References 10 publications

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“…Finally, the Al electrodes were deposited on the corresponding N+ and P+ regions of SDD by electron beam evaporation and metal lift-off process in acetone was performed to form the patterned metal contacts. Some detailed fabrication processes can be seen in these publications [17][18][19][20]. We fabricated the two square-SDD devices SDD-1 and SDD-2 by APCVD technology and their structures are shown in Figure 1a,b.…”

Section: Methodsmentioning

confidence: 99%

The Effects of Different Anode Positions on the Electrical Properties of Square-Silicon Drift Detector

et al. 2022

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The Silicon Drift Detector (SDD) with square structure is often used in pixel-type SDD arrays to reduce the dead region considerably and to improve the detector performance significantly. Usually, the anode is located in the center of the active region of the SDD with square structure (square-SDD), but the different anode positions in the square-SDD active area are also allowed. In order to explore the effect on device performance when the anode is located at different positions in the square-SDD active region, we designed two different types of square-SDD in this work, where the anode is located either in the center (SDD-1) or at the edge (SDD-2) of its active region. The simulation results of current density and potential distribution show that SDD-1 and SDD-2 have both formed a good electron drift path to make the anode collect electrons. The experimental results of device performance at the temperature range from −60 °C to 60 °C show that the anode current of the two fabricated SDDs both decreased with the decrease of temperature, but their voltage divider characteristics exhibited high stability resistance value and low temperature coefficient, thereby indicating that they could both provide corresponding continuous and uniform electric field at different temperatures. Finally, SDD-1 and SDD-2 have energy resolutions of 248 and 257 eV corresponding to the 5.9 keV photon peak of the Fe-55 radioactive source, respectively. Our experimental results demonstrate that there is no significant impact on the device performance irrespective of the anode positions in the square-SDD devices.

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Section: Methodsmentioning

confidence: 99%

The Effects of Different Anode Positions on the Electrical Properties of Square-Silicon Drift Detector

et al. 2022

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“…Consequently, electrons have shorter drift paths and SDD has optimum time resolution and ultra-fast time response to detect pulsed radiation signals. Therefore in recent years the SDD with circular ring-shaped structure has been considered to be an optimum structure and is applied in the field of pulsed radiation detection in deep space environment [3].…”

mentioning

confidence: 99%

“…Previous research work related to SDDs mainly focused on device fabrication and experimental tests of different shape and structure [1,3,22,24,26]. Some simulations of detector processing and device electrical properties of spiral SDDs, or special shape SDD, were performed in recent years using 2D or 3D simulation tools [23,24,27].…”

mentioning

confidence: 99%

Electric simulation of silicon drift detector for single photon measurement

Liu

Huang

Shu

et al. 2020

EPL

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The silicon drift detector (SDD) with high quantum efficiency, energy resolution and time resolution is an advanced single photon counting detector in the fields of quantum communication, X-ray communication and pulsar navigation. In this paper we design an optimum SDD structure with circular drift rings and linear-type voltage divider, the device electric characteristics are simulated using a 3D Sentaurus TCAD computational tool including electric potential, electric field, electron concentration, voltage-divider current, leakage current and saturation capacitance. Simulation results are comparable with those of conventional spiral SDDs and other shapes of ring SDDs. The circular ring-shaped structure can generate more even and symmetrical radial electric potential and field distribution, so electrons have shorter and more distinct drift channels, and SDD has ultra-fast time response and good time resolution to detect pulsed single photon signals.

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Design and fabrication of quasi-double-sided silicon drift detector for x-ray detection

Wang

Luo

Jia

et al. 2023

Materials Science in Semiconductor Processing

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Design and preparation of integrated voltage divider for silicon drift detector by ion implantation

Cited by 3 publications

References 10 publications

The Effects of Different Anode Positions on the Electrical Properties of Square-Silicon Drift Detector

The Effects of Different Anode Positions on the Electrical Properties of Square-Silicon Drift Detector

Electric simulation of silicon drift detector for single photon measurement

Design and fabrication of quasi-double-sided silicon drift detector for x-ray detection

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