Efficiency comparison of SiC and Si-based bidirectional DC-DC converters

Han, Di; Noppakunkajorn, Jukkrit; Sarlioglu, Bulent

doi:10.1109/itec.2013.6574511

Cited by 37 publications

(12 citation statements)

References 16 publications

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“…The breakdown electric field of 4H-SiC is about ten times higher than for Si which make possible to design of SiC power diodes with 10 times thinner voltage blocking layers [13,14]. In the case of bipolar devices where both electrons and holes are responsible for the current conduction, made of Si the switching speed is limited and switching losses are high due to the stored charge effects.…”

Section: Sic Vs Simentioning

confidence: 99%

“…off-axis cut towards the [11][12][13][14][15][16][17][18][19][20] direction rendering a surface with atomic steps to facilitate step-flow controlled epitaxial growth [70] which makes it possible to achieve homopolytypic growth at lower temperature. The epitaxial layers grown on 4H-SiC substrate with an off-cut of 8° yields less surface defects.…”

Section: Substratementioning

confidence: 99%

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Precursors and defect control for halogenated CVD of thick SiC epitaxial layers

Yazdanfar¹

2014

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Section: Sic Vs Simentioning

confidence: 99%

Section: Substratementioning

confidence: 99%

Precursors and defect control for halogenated CVD of thick SiC epitaxial layers

Yazdanfar¹

2014

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“…Silicon carbide (SiC) MOSFETs have the advantages of high breakdown electric field, fast drift saturation of carriers, good thermal stability, and high thermal conductivity [1][2][3][4][5]. These advantages of SiC MOSFETs can improve the performance of electronic converters.…”

Section: Introductionmentioning

confidence: 99%

A Gate Driver Based on Variable Voltage and Resistance for Suppressing Overcurrent and Overvoltage of SiC MOSFETs

Chen

Liang³

2019

Energies

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A SiC MOSFET is a suitable replacement for a Si MOSFET due to its lower on-state resistance, faster switching speed, and higher breakdown voltage. However, due to the parasitic parameters and the low damping in the circuit, the turn-on overcurrent and turn-off overvoltage of a SiC MOSFET become more severe as the switching speed increases. These effects limit higher frequency applications of SiC MOSFET. Based on the causes of overcurrent and overvoltage of SiC MOSFET, a novel gate driver with the variable driving voltage and variable gate resistance is proposed in this paper to suppress the overcurrent and overvoltage of SiC MOSFETs. The proposed gate driver can realize the variation in driving voltage and gate resistance during switching transitions. It not only suppresses the overcurrent and overvoltage of SiC MOSFETs, but also has little effect on switching loss. The working principle of the proposed gate driver is analyzed in this paper. Finally, experimental verification on a double-pulse test platform is performed to verify the effectiveness of the proposed gate driver.

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“…It is featured by much higher blocking voltages, lower on-state resistance, higher switching speeds and higher thermal conductivity than conventional silicon (Si) devices [1]- [5]. In addition, a SiC MOSFET is capability of operation under higher density power conversion [6].…”

Section: Introductionmentioning

confidence: 99%

An Improved Analytical Model for Predicting the Switching Performance of SiC MOSFETs

Liang¹,

Zheng²,

Li³

2016

Journal of Power Electronics

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This paper derives an improved analytical model to estimate switching loss and analyze the effects of parasitic elements on the switching performance of SiC MOSFETs. The proposed analytical model considers the parasitic inductances, the nonlinearity of the junction capacitances and the nonlinearity of the trans-conductance. The turn-on process and the turn-off process are illustrated in detail, and equivalent circuits are derived and solved for each switching transition. The proposed analytical model is more accurate and matches better with experimental results than other analytical models. Note that switching losses calculated based on experiments are imprecise, because the energy of the junction capacitances is not properly disposed. Finally, the proposed analytical model is utilized to account for the effects of parasitic elements on the switching performance of a SiC MOSFET, and the circuit design rules for high frequency circuits are given.

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Efficiency comparison of SiC and Si-based bidirectional DC-DC converters

Cited by 37 publications

References 16 publications

Precursors and defect control for halogenated CVD of thick SiC epitaxial layers

Precursors and defect control for halogenated CVD of thick SiC epitaxial layers

A Gate Driver Based on Variable Voltage and Resistance for Suppressing Overcurrent and Overvoltage of SiC MOSFETs

An Improved Analytical Model for Predicting the Switching Performance of SiC MOSFETs

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