Effects of X-Ray Irradiation on the Characteristics of Metal-Oxide-Silicon Structures

Collins, D.R.; Sah, C. T.

doi:10.1063/1.1754517

Cited by 43 publications

(10 citation statements)

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“…The lack of PL signal in the left‐hand image indicates the heavy presence of defects that promote nonradiative recombination, despite a passivation anneal at 420°C prior to metallization. We suggest that this is likely due to X‐rays emitted during electron‐beam evaporation of the aluminium, which are known to cause material degradation in the form of increased oxide traps, charges, and surface states . A dramatic increase in the PL counts (relative increase in lifetime and V oc ) is seen following the sintering step (right‐hand image), particularly for the undiffused and non‐metallized region around the perimeter.…”

Section: Resultsmentioning

confidence: 96%

Minimising bulk lifetime degradation during the processing of interdigitated back contact silicon solar cells

Rahman

Pollard

et al. 2017

Progress in Photovoltaics

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In this work, we develop a fabrication process for an interdigitated back contact solar cell using BBr 3 diffusion to form the p + region and POCl 3 diffusion to form the n + regions. We use the industry standard technology computer-aided design modelling package, Synopsys Sentaurus, to optimize the geometry of the device using doping profiles derived from electrochemical capacitance voltage measurements. Cells are fabricated using n-type float-zone silicon substrates with an emitter fraction of 60%, with localized back surface field and contact holes. Key factors affecting cell performance are identified including the impact of e-beam evaporation, dry etch damage, and bulk defects in the float zone silicon substrate. It is shown that a preoxidation treatment of the wafer can lead to a 2 ms improvement in bulk minority carrier lifetime at the cell level, resulting in a 4% absolute efficiency boost. exceptionally high lifetimes can be achieved owing to the high purity of the material. 5 However, recent work by Grant et al has demonstrated that FZ silicon contains defects, which are incorporated during crystal growth. 6,7 In as-grown samples, the defects are essentially latent, but they become activated as recombination centres upon heat-treating FZ silicon at temperatures between 450°C and 750°C.Thus, although the as-received lifetime is very high, the lifetime can ---------------------------------------------------------------------------------------------This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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Section: Resultsmentioning

confidence: 96%

Minimising bulk lifetime degradation during the processing of interdigitated back contact silicon solar cells

Rahman

Pollard

et al. 2017

Progress in Photovoltaics

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“…The total number of interface traps per unit area that are contributing charge (i.e., n it ) obtained from (11), (14) and (16) are plotted as a function of surface potential and bandgap energy in Fig. 4.…”

Section: Modelingmentioning

confidence: 99%

“…Equations (11) -(16) are easily modified for modeling asymmetric distributions of D it (ψ s ) reported in [4,[11][12][13]. The asymmetric model requires separate D it1 and E t parameters for acceptor-like (D it1-acc , E t-acc ) and donor-like (D it1-don , E t-don ) traps.…”

Section: Modelingmentioning

confidence: 99%

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Modeling the non-uniform distribution of interface traps

Esqueda

Barnaby

2011

2011 12th European Conference on Radiation and Its Effects on Components and Systems

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The incorporation of total ionizing dose (TID) effects into surface-potential-based compact models requires calculating the dependence of surface potential (ψ s ) on radiation-induced defect densities. This dependence is obtained through the introduction of the oxide trapped charge (N ot ) and the interface trap (N it ) areal densities into the surface potential equation (SPE). In this work we present an approach for introducing a non-uniform energy distribution of interface traps into calculations of ψ s . The approach is verified experimentally through comparisons with capacitance vs. voltage (C-V) characteristics of metal-oxide-semiconductor (MOS) capacitors exposed to ionizing radiation.Index Terms-Total ionizing dose (TID), metal-oxidesemiconductor (MOS), interface traps, surface potential, compact model.

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“…In the 1960s and early-1970s it was recognized that the almost perfect insulator, thermal silicon oxide, would have reliability limitations due to its sensitivity to radiation [3][4][5][6][7] and due to the possibility of electric breakdowns [8][9][10]. The damage introduced by ionizing radiation was fundamentally different from that introduced by application of high voltages [11][12][13][14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Oxide Wearout, Breakdown, and Reliability

Dumin

2001

Int. J. Hi. Spe. Ele. Syst.

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The subject of oxide wearout, breakdown, and reliability will be reviewed, largely, from an historical perspective. Five topics will be discussed: oxide breakdown, oxide leakage currents, trap generation, statistics, and reliability. An early model of oxide breakdown, developed by Klein and Solomon, will be described and will be shown to be generally applicable to oxides manufactured today, and to other solid insulators, as well. Both hard and soft breakdowns were included in this model and will be discussed here. The importance of stressinduced-leakage-currents (SILCs) and direct tunneling currents will be discussed in the context of device applications, thinner oxides, and oxide reliability. The diminishing importance of breakdown in ultra thin oxides in ultra small devices will be contrasted with the increasing importance of oxide leakage currents. Trap generation is important in the triggering of breakdown and in the formation of SILCs. Trap generation will be discussed in some detail. Various statistical formulations of oxide breakdown, and how these distributions are related to trap generation, will be discussed. All of these effects will be related to oxide reliability and oxide integrity. An extensive bibliography has been included to help the reader obtain more detailed information concerning the concepts being discussed. Int. J. Hi. Spe. Ele. Syst. 2001.11:617-718. Downloaded from www.worldscientific.com by UNIVERSITY OF VIRGINIA on 04/10/15. For personal use only. Int. J. Hi. Spe. Ele. Syst. 2001.11:617-718. Downloaded from www.worldscientific.com by UNIVERSITY OF VIRGINIA on 04/10/15. For personal use only. Oxide Wearout, Breakdown, and Reliability 619found in an early review paper [20]. This wearout/breakdown model will be referred to as the "Klein/Solomon" model below when comparisons with modern works are needed.The Klein/Solomon model has been refined and confirmed continuously from the 1970s through the present time [10,20,. The extent of the damage is determined both by the 1/2 CV 2 energy stored in the capacitor and by the rate at which this energy discharges through the local hot spot [10,20,75,82,83,88,92,93,96,[100][101][102]. The local hot spot is often accompanied by light emission, in many cases incandescence [8-10, 103-115]. Several techniques have been developed for using the damage introduced during the breakdown to study the breakdown process [80,[116][117][118][119][120][121][122][123][124]. During the breakdown event, the stored energy in the capacitor, 1/2 CV 2 , partially discharges through the breakdown region in a time limited by the impedance of the total measurement system [8][9][10][82][83][84][85].The local breakdowns are intimately coupled to the trap generation and various trap generation models will be discussed in a separate section.During the breakdowns described by Klein/Solomon, one of two scenarios is possible during and following a breakdown discharge. Which scenario takes place depends on the oxide thickness, the oxide area, the magnitude of the stored energy, the ...

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Effects of X-Ray Irradiation on the Characteristics of Metal-Oxide-Silicon Structures

Abstract: Comparison of interface positive charge generated in metaloxidesilicon devices by highfield electron injection and xray irradiation Appl. Phys. Lett. 51, 1643Lett. 51, (1987; 10.1063/1.98582Interface trap behavior in irradiated metaloxidesilicon structures

Cited by 43 publications

References 8 publications

Minimising bulk lifetime degradation during the processing of interdigitated back contact silicon solar cells

Minimising bulk lifetime degradation during the processing of interdigitated back contact silicon solar cells

Modeling the non-uniform distribution of interface traps

Oxide Wearout, Breakdown, and Reliability

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