2011
DOI: 10.1016/j.tsf.2011.07.004
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Effects of UV-ozone treatment on radio-frequency magnetron sputtered ZnO thin films

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Cited by 24 publications
(15 citation statements)
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“…4a), the decrease in the intensity may be the result of diminished V O defects aer the UV-ozone treatment. 31,32 On the other hand, the blue shi of the spectra and the re-increase of the intensity of visible-emission revealed that UV-ozone treatment resulted in an increased O i density, 19 coinciding with the XPS results. The results of XPS measurement and optical performance tests revealed that V O defects were gradually passivated.…”
Section: Resultssupporting
confidence: 59%
“…4a), the decrease in the intensity may be the result of diminished V O defects aer the UV-ozone treatment. 31,32 On the other hand, the blue shi of the spectra and the re-increase of the intensity of visible-emission revealed that UV-ozone treatment resulted in an increased O i density, 19 coinciding with the XPS results. The results of XPS measurement and optical performance tests revealed that V O defects were gradually passivated.…”
Section: Resultssupporting
confidence: 59%
“…34 However, we can conclude that the attachment of the organic layer is the dominant effect in restoring the high conductivity state, because the stearic acid solution treatment is not expected to significantly alter the concentrations of either oxygen vacancies or oxygen interstitials in the film.…”
mentioning
confidence: 83%
“…2b 1s photoelectron with lower kinetic energy compared to the main peak in a ZnO matrix. 44 After UV soaking in UHV, the oxygen- valence band region appears due to the increase of O2p state intensity, 43 which implies filling of oxygen vacancies by oxygen introduced by UV-ozone. Considering that the lack of oxygen stoichiometry makes ZnONP as n-type semiconductor due to the oxygen defects, 45 the surface of ZnONP becomes less conducting during UV-ozone soaking 24,25 and less n-type, in agreement with the observed increase in WF and the smaller energy offset between valence band and Fermi level in the case of the constant band gap.…”
Section: Introductionmentioning
confidence: 99%