Poly(3-hexylthiophene) (P3HT) brushes on silicon dioxide (SiO 2 ) were prepared using a click reaction between ethynyl-terminated P3HT and an azide self-assembled monolayer (SAM). Regioregular ethynyl-terminated P3HT with molecular weight of 5900 g mol À1 and polydispersity of 1.2 was synthesized by catalyst-transfer polycondensation using Grignard metathesis mediated by a nickelbased catalyst. The azide SAM was prepared from bifunctional molecules containing azide and siloxane as click reaction precursor and surface linker, respectively. The P3HT brushes were characterized by atomic force microscopy, ellipsometry, X-ray photoelectron spectroscopy, infrared reflection absorption spectroscopy, and UV-visible spectroscopy. The grafting of P3HT brushes was studied as a function of click reaction time and the growth of the brushes is governed by a diffusioncontrolled process. P3HT brushes were prepared on pre-fabricated field-effect transistor structures in order to probe the electrical properties of the brushes. The versatile synthetic methodology developed in this work can be generalized to prepare a wide variety of semiconducting conjugated polymer brushes on oxide surfaces relevant to organic electronic devices.

Monolayer‐thickness two‐dimensional layers of α,ω‐dihexylsexithiophene (α,ω‐DH6T) exhibit field‐effect hole mobility of up to 0.032 cm2 V−1 s−1, higher than previously reported for monolayers of other small‐molecule organic semiconductors. In situ measurements during deposition show that the source‐drain current saturates rapidly after the percolation of monolayer‐high islands, indicating that the electrical properties of α,ω‐DH6T transistors are largely determined by the first molecular monolayer. The α,ω‐DH6T monolayer consists of crystalline islands in which the long axes of molecules are oriented approximately perpendicular to the plane of the substrate surface. In‐plane lattice constants measured using synchrotron grazing‐incidence diffraction are larger in monolayer‐thickness films than the in‐plane lattice constants of several‐monolayer films and of previously reported thick‐film structures. Near‐edge X‐ray absorption fine structure spectroscopy (NEXAFS) reveals that the larger in‐plane lattice constant of single‐monolayer films arises from a larger tilt of the molecular axis away from the surface normal. NEXAFS spectra at the C 1s and S 2p edges are consistent with a high degree of molecular alignment and with the local symmetry imposed by the thiophene ring. The high mobility of holes in α,ω‐DH6T monolayers can be attributed to the reduction of hole scattering associated with the isolation of the thiophene core from the interface by terminal hexyl chains.

Modifying the surface of polycrystalline ZnO films using a monolayer of organic molecules with carboxylic acid attachment groups increases the field-effect electron mobility and zero-bias conductivity, resulting in improved transistors and transparent conductors. The improvement is consistent with the passivation of defects via covalent bonding of the carboxylic acid and is reversible by exposure to a UV-ozone lamp. The properties of the solvent used for the attachment are crucial because solvents with high acid dissociation constants (Ka) for carboxylic acids lead to high proton activities and etching of the nanometers-thick ZnO films, masking the electronic effect.

Large-wave-vector phonons have an important role in determining the thermal and electronic properties of nanoscale materials. The small volumes of such structures, however, have posed significant challenges to experimental studies of the phonon dispersion. We show that synchrotron x-ray thermal diffuse scattering can be adapted to probe phonons with wave vectors spanning the entire Brillouin zone of nanoscale silicon membranes. The thermal diffuse scattering signal from flat Si nanomembranes with thicknesses from 315 to 6 nm, and a sample volume as small as 5 μm(3), has the expected linear dependence on the membrane thickness and also exhibits excess intensity at large wave vectors, consistent with the scattering signature expected from low-lying large-wave-vector modes of the membranes.

We demonstrate the Langmuir-Blodgett assembly of two rhenium-bipyridine complexes containing a flexible or an aromatic bridge, and transfer of the monolayer to SiO2 and single crystal TiO2 substrates. Both of the complexes (ReEC and Re2TC) have a hydrophilic carboxylic acid group, which preferentially anchors into the water subphase, and forms stable monolayers at surface pressures up to 40 mN/m. The optimum conditions for the formation of complete monolayers of both ReEC and Re2TC were identified through characterization of the morphology by atomic force microscopy (AFM), the thickness by ellipsometry, and the surface coverage by X-ray photoelectron spectroscopy (XPS). X-ray reflectivity measurements (XRR) are consistent with the orientation of the molecules normal to the substrate, and their extension to close to their calculated maximum length. Parameters derived from XRR analysis show that there is a higher packing density for Re2TC monolayers than for ReEC monolayers, attributable to the more rigid bridge in the Re2TC molecule.

Photoinduced charge transfer modifies the device properties of illuminated pentacene field effect transistors (FETs) incorporating ZnO quantum dots at the gate insulator/pentacene interface. The transferred charge is trapped on electronic states associated with the ZnO quantum dots, with a steady state population approximately proportional to the rate of organic-inorganic charge transfer. Trapped charge shifts the threshold voltage of the FETs, providing the means to evaluate the rate of organic/inorganic charge transfer and the effects of interface modification. Monolayers of the wide-gap alkane stearic acid and the conjugated oligomer terthiophene attached to the ZnO suppress or permit charge transfer, respectively.

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