2013
DOI: 10.1063/1.4790155
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Electron mobility enhancement in ZnO thin films via surface modification by carboxylic acids

Abstract: Modifying the surface of polycrystalline ZnO films using a monolayer of organic molecules with carboxylic acid attachment groups increases the field-effect electron mobility and zero-bias conductivity, resulting in improved transistors and transparent conductors. The improvement is consistent with the passivation of defects via covalent bonding of the carboxylic acid and is reversible by exposure to a UV-ozone lamp. The properties of the solvent used for the attachment are crucial because solvents with high ac… Show more

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Cited by 35 publications
(30 citation statements)
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References 34 publications
(30 reference statements)
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“…Our results confirm the experimental evidences of Ref. 65, where the saturation electron mobility in ZnO thin film FETs functionalized with stearic acid (CH 3 (CH 2 ) 16 COOH) was enhanced by about one order of magnitude. We found that the band bending and curvature of the -COOH-ZnO wire at the C-point are reduced compared to the bare NW.…”
Section: B Nanowiressupporting
confidence: 81%
“…Our results confirm the experimental evidences of Ref. 65, where the saturation electron mobility in ZnO thin film FETs functionalized with stearic acid (CH 3 (CH 2 ) 16 COOH) was enhanced by about one order of magnitude. We found that the band bending and curvature of the -COOH-ZnO wire at the C-point are reduced compared to the bare NW.…”
Section: B Nanowiressupporting
confidence: 81%
“…[19][20][21][22] The IOSC devices with a structure of indium tin oxide (ITO)/ZnONFs/poly(3-hexylthiophene):(6,6)-phenyl-C61-butyric acid methyl ester (P3HT:PCBM)/molybdenum oxide (MoO 3 )/Ag were then fabricated. ITO-coated glass substrates were cleaned in an ultrasonic bath with acetone and isopropyl alcohol for 20 min each, rinsed with deionized water, and then blew-dried with nitrogen.…”
Section: Methodsmentioning
confidence: 99%
“…The electrical conductivity of the ZnONFs has been signicantly improved by suppressing the V O defects. 19,22 Thus, passivation of V O defects is in favor of enhancing the performances of the devices. Compared with these methods, UV-ozone treatment is regarded as an effective way to alter the surface states and modify the defects of ZnONFs without any additives.…”
Section: Introductionmentioning
confidence: 99%
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“…As for the acid treatment of ZnO photoanodes, although the ZnO surface is etched in the presence of acid owing to the dissolution of Zn + ions, some studies have reported improvement in the conductivity and mobility in ZnO upon acid treatment [63]. Chen et al [64] found that the efficiency of a DSSC increased from 0.7% to 1.2% after treatment of vertically aligned ZnO nanowires with HAuCl4 acid.…”
Section: Surface Treatment On Zno Photoanodementioning
confidence: 99%