Effects of the substrate temperature on the properties of CuIn5S8 thin films

Experimental investigation of the effect of indium content on the CuIn5S8 electrodes using electrochemical impedance spectroscopy

“…Therefore, CuIn 5 S 8 spinel phase being typically n-type and having a similar band gap of 1.5 eV, matches well with the solar spectrum for energy conversion [6]. CuIn 5 S 8 is visible-light-active materials with high-absorption coefficients, suitable band gaps, good radiation stability, and easy conversion between n-and p-type carrier types which permits a variety of potentially low-cost homo and hetero junction [5,7]. An efficiency of about 9.1% was associated with the p-CuInS 2 /CuI/nCuIn 5 S 8 tandem structure solar cell [8].…”

Investigation of growth and characterization of nanostructured CuIn5S8 thin films produced by glancing angle deposition

“…4 shows the XRD patterns of CuIn 5 S 8 thin films deposited respectively, at α = 0°, 40°, 60° and 85° with a substrate rotation of  = 2 rpm. It is clear from this figure that all the films have only one major peak at 2 = 27.89° which we have assigned to the (311) plane characteristic of spinel structure [24]. We note that no additional peaks were recorded in the XRD patterns.…”

Structural, electronic and optoelectronic properties of AB 5 C 8 ( A = Cu/Ag; B = In and C = S, Se and Te ) compounds

“…The ternary semi‐conductor family AB 5 C 8 (A = Cu or Ag, B = In and C = S, Se or Te) is one of the most important representative among the ternary semi‐conductors. These ternary semiconductors are mostly visible‐light active materials which have recently gained significant interest due to appropriate band gaps, high absorption coefficients, inter‐conversion between P‐ and N‐type carrier types as well as in manufacturing of comparatively cheap homo and hetero junction structures 8,15,16 . Generally composition of elements in these compounds as well as its synthesis method can suggest either it is N‐type or P‐type semi‐conductor having band gaps appropriate for light absorption in solar or photo‐electrochemical cells 17,18 .…”

“…Generally composition of elements in these compounds as well as its synthesis method can suggest either it is N‐type or P‐type semi‐conductor having band gaps appropriate for light absorption in solar or photo‐electrochemical cells 17,18 . These compounds have wide range applications in different fields, for example, manufacturing of light emitting diodes, photovoltaic and photo‐electrochemical cells and in other optical devices 8,15,17,19‐22 also having applications in ferro‐electricity and super conductivity 15,20,23 . As these are environment friendly compounds, so these can be used as absorbers 16 .…”

“…Thin films of AgIn 5 S 8 and CuIn 5 S 8 were also synthesized by Makhova et al, 24 using sequential evaporation method. Thin films of CuIn 5 S 8 were prepared by Gannouni et al, 8,15 using thermal evaporation method. Later, single crystals of CuIn 5 S 8 were prepared by Bodnar 49 using Bridgman method.…”