Effects of surface hydrogen on the air oxidation at room temperature of HF-treated Si (100) surfaces

Hirashita, N.; Kinoshita, Makio; Aikawa, I.; Ajioka, T.

doi:10.1063/1.102762

Cited by 122 publications

(42 citation statements)

References 11 publications

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“…Subsequently the native silicon oxide layer was removed using hydrofluoric acid, which also hydrogen terminated the silicon surface. 16,17 Sputter deposition was carried out in a vacuum chamber with a base pressure of 1 ϫ 10 −8 mbar, equipped with two 7.62 cm dc magnetron sputter guns and a bakeable substrate holder. Indirect cooling of the substrate occurred by absorption of the blackbody radiation using a liquid nitrogen cryotrap, used to improve the vacuum quality.…”

Section: A Thin Film Preparationmentioning

confidence: 99%

Epitaxial growth of nickel on Si(100) by dc magnetron sputtering

Kreuzpaintner¹,

Störmer²,

Lott³

et al. 2008

Journal of Applied Physics

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The influence of the substrate temperature on the growth of highly textured Ni͑111͒ and epitaxial Ni͑200͒ with the relationships Ni͓100͔ ʈ Si͓110͔ and Ni͑001͒ ʈ Si͑001͒ on hydrogen terminated Si͑100͒ wafer substrates by means of direct current magnetron sputtering is reported. In order to minimize crystal defect formation and to achieve a high quality epitaxial growth of Ni on Si, a two step deposition process was developed whereby different deposition conditions were used for an initial nickel seed layer and the remaining nickel film. The in-plane and out-of-plane structural properties of the films were investigated using x-ray scattering techniques, whereas magneto-optical Kerr effect and neutron reflectometry were used to confirm the magnetic nature of the epitaxially deposited nickel films.

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Section: A Thin Film Preparationmentioning

confidence: 99%

Epitaxial growth of nickel on Si(100) by dc magnetron sputtering

Kreuzpaintner¹,

Störmer²,

Lott³

et al. 2008

Journal of Applied Physics

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“…Second, the ultrathin layer of SiO 2 was grown onto the wafers with different thickness using the technique of anodization (ANO) after removing native oxides by HF. 25 It is noticed that platinum was used as the cathode and wafer being the anode when using the anodization technique. 26 Then, thin Hf metal films were deposited onto the wafer by sputtering with the power of 60W and the sputtering time of 90 secs.…”

Section: Methodsmentioning

confidence: 99%

Photo-induced tunneling currents in MOS structures with various HfO2/SiO2 stacking dielectrics

Pang

Hwu

2014

AIP Advances

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In this study, the current conduction mechanisms of structures with tandem high-k dielectric in illumination are discussed. Samples of Al/SiO2/Si (S), Al/HfO2/SiO2/Si (H), and Al/3HfO2/SiO2/Si (3H) were examined. The significant observation of electron traps of sample H compares to sample S is found under the double bias capacitance-voltage (C-V) measurements in illumination. Moreover, the photo absorption sensitivity of sample H is higher than S due to the formation of HfO2 dielectric layer, which leads to larger numbers of carriers crowded through the sweep of VG before the domination of tunneling current. Additionally, the HfO2 dielectric layer would block the electrons passing through oxide from valance band, which would result in less electron-hole (e−-h+) pairs recombination effect. Also, it was found that both of the samples S and H show perimeter dependency of positive bias currents due to strong fringing field effect in dark and illumination; while sample 3H shows area dependency of positive bias currents in strong illumination. The non-uniform tunneling current through thin dielectric and through HfO2 stacking layers are importance to MOS(p) tunneling photo diodes.

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“…If hydrogen has been removed, oxidation will occur instantly when bringing the sample in air, forming a thin oxide layer. 9 The sample is then etched with TMAH at 75°C for 10 s. This etches about 100 nm of Si, but does not etch through the formed oxide layer. Inspection of the etched sample with a scanning electron microscope ͑SEM͒ reveals the exposure requirements for the removal of hydrogen as a function of the electron energy.…”

Section: ϫ3mentioning

confidence: 99%

Nanometer lithography on silicon and hydrogenated amorphous silicon with low energy electrons

Kramer

Jorritsma

Birk

et al. 1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The oxidation of a hydrogen terminated Si surface can locally be induced with a scanning tunnelling microscope ͑STM͒ operating in air or with a beam of free electrons in a controlled oxygen environment. The oxidation mechanism of both processes was studied and compared. The oxidation with the STM in air depends strongly on the applied tip-substrate voltage and writing speed, but is not proportional to the tunnelling current. This is in contrast to the process with a beam of free electrons. The thickness of the electron beam induced oxide is studied as a function of electron energy, electron dose, and oxygen pressure. Oxide thicknesses of 0.5-3 nm are measured using Auger spectroscopy. The initial step of the oxidation process is the electron beam induced removal of hydrogen from the surface. The electron dose requirement for this step was determined as a function of electron energy. The dose is found to be minimal for 100 eV electrons, and is Ϸ4 mC/cm 2 . Oxide lines made with the STM on Si͑110͒ were used as a mask to wet etch the pattern into the Si͑110͒. With tetramethyl ammonium hydroxide, a selective anisotropic etch liquid, trenches with a width of 35 nm and a depth of 300 nm were made. We show that it is also possible to locally oxidize hydrogenated amorphous silicon ͑a-Si:H͒ and use the oxide as an etching mask. Hydrogenated amorphous silicon has the advantage that it can be deposited in very thin layers on almost any substrate and therefore has great potential as STM and electron-beam resist.

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Effects of surface hydrogen on the air oxidation at room temperature of HF-treated Si (100) surfaces

Cited by 122 publications

References 11 publications

Epitaxial growth of nickel on Si(100) by dc magnetron sputtering

Epitaxial growth of nickel on Si(100) by dc magnetron sputtering

Photo-induced tunneling currents in MOS structures with various HfO2/SiO2 stacking dielectrics

Nanometer lithography on silicon and hydrogenated amorphous silicon with low energy electrons

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