Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers

Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface

“…Zhou et al proposed the process of colloidal silica polishing, which requires a concentrated colloidal silica slurry at temperatures higher than 55 8C and a pH value higher than 10 [1,2]. The surface finished by CMP has no subsurface damage, as evaluated by cross-sectional transmission electron microscopy (XTEM), and leads to the formation of a highintegrity epitaxial growth layer in terms of surface morphology [1][2][3]. However, the material removal rate (MRR) of CMP is very low (<0.5 mm/h).…”

Identification of subsurface damage in freestanding HVPE GaN substrates and its influence on epitaxial growth of GaN epilayers

“…The polishing process is very important for further epitaxial growth and device performance for other substrates such as GaAs [6], InP [7], and SiC [8][9][10] growth to recover the surface from polishing scratches [11]. Due to the high nitrogen overpressure needed to prevent decomposition, this method cannot easily be applied to GaN substrates [12].…”

Electro-chemical mechanical polishing of silicon carbide

“…Both silica slurry and a mixture of anodizing agents and silica slurry were used in these trials. No polishing was observed after 6 h of CMP at room temperature, although a very low polishing rate (ϳ150 Å/h) was reported by Saddow et al 10 A simultaneous oxidation/CMP process was then carried out. A mixture of KNO 3 with silica slurry solution (1:1 ϭ 10% KNO 3 : silica slurry) was first used as the medium for this process.…”