Effects of Space-Charge Layer Widening in Junction Transistors

Early, J.M.

doi:10.1109/jrproc.1952.273969

Cited by 237 publications

(17 citation statements)

References 3 publications

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“…This also makes it problematic to dope the base layer highly; high base doping would otherwise be desirable, for it can reduce the base resistance and also the Early effect. 20,21 The introduction of a wide band-gap emitter 24,25 can be used to keep the barrier high for injection of base majority carriers into the emitter. In a unipolar spin diode, however, the two types of carriers have the same charge.…”

Section: Heterostructure Unipolar Spin Transistorsmentioning

confidence: 99%

Heterostructure unipolar spin transistors

Flatté

Vignale

2005

Journal of Applied Physics

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We extend the analogy between charge-based bipolar semiconductor electronics and spin-based unipolar electronics by considering unipolar spin transistors with different equilibrium spin splittings in the emitter, base, and collector. The current of base majority spin electrons to the collector limits the performance of "homojunction" unipolar spin transistors, in which the emitter, base, and collector are all made from the same magnetic material. This current is very similar in origin to the current of base majority carriers to the emitter in homojunction bipolar junction transistors. The current in bipolar junction transistors can be reduced or nearly eliminated through the use of a wide band-gap emitter. We find that the choice of a collector material with a larger equilibrium spin splitting than the base will similarly improve the device performance of a unipolar spin transistor. We also find that a graded variation in the base spin splitting introduces an effective drift field that accelerates minority carriers through the base towards the collector.

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Section: Heterostructure Unipolar Spin Transistorsmentioning

confidence: 99%

Heterostructure unipolar spin transistors

Flatté

Vignale

2005

Journal of Applied Physics

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“…Using values for AV and IE3 shown in Figure 3-2, the BN value taken from Figure 3-8 at I C = IE3 , and the value for RSE determined from previous section, Equation (3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19) can be solved for the base bulk resistance RB.…”

Section: Ai 81' Reverse Current Gainsmentioning

confidence: 99%

“…(6-17) GS 1 a3ID a 3 6 DV's3 (6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18) The following values were obtained 'The parameters used in Eq. (6-19) are described in Table 6-1.…”

Section: Vrs2mentioning

confidence: 99%

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Nonlinear System Analysis in Bipolar Integrated Circuits.

Fang¹,

Whalen²

1980

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“…68,69 Jim Early concurrently improved our understanding of the static characteristics of conventional bipolar transistors by utilizing a heavily doped, thin base such that the space-charge widening in the collector enhanced the bipolar transistor's transist time. 70,71 The mesa and planar processes paved the way for the fabrication of the IC by Jack Kilby 15,16,18 97 The exploding research on the physical chemistry and resulting electronic properties of single-crystal germanium and silicon ͑i.e., crystal growth, control of composition, defects, structure, diffusion, electrical and thermal transport properties as well as surface and electrode properties͒ were summarized by Bruce Hannay ͑Fig. 9͒, ECS President in 1973-1974 in the classic monograph Semiconductors.…”

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confidence: 99%

An Electronics Division Retrospective (1952-2002) and Future Opportunities in the Twenty-First Century

Huff¹

2002

J. Electrochem. Soc.

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The emergence of crystalline silicon and silicon-based materials such as silicon-germanium as the premier materials and the personnel driving the integrated circuit ͑IC͒ microelectronics revolution will be reviewed. The major threshold events from the 1940s through the mid-1960s, presaging the onset of the large scale integration microelectronics era, will be highlighted. The major silicon material challenges such as dislocation-free single-crystal growth, plastic deformation, the point-defect dilemma, gettering, oxygen in silicon, carrier lifetime, and controlled point-defects in the silicon crystal during the evolution of silicon microelectronics from large scale integration through the very large scale integration era in the 1970s and the 1980s into the ultralarge scale integration era of the 1990s will then be reviewed. Opportunities in epitaxy, wafer cleaning, silicon-on-insulator, silicon-germanium, IC scaling and potential changes in device configuration and IC architecture in the evolution towards the 64 Gbit DRAM and 9 G transistor high-performance MPU logic era in 2016 ͑per the 2001 edition of the International Technology Roadmap for Semiconductors͒ will be discussed in the context of silicon-based microelectronics. The complementary role of compound semiconductors, nanoelectronics and the continuing initiative to obtain an optoelectronic system compatible with silicon will also be discussed. Finally, nonsilicon materials and device configurations will briefly be noted. © 2002 The Electrochemical Society. ͓DOI: 10.1149/1.1471893͔ All rights reserved.Available electronicallyApril 11, 2002. The computer and communications age has catapulted electronics to its current status as the dominant global industry. Indeed, we are in the midst of a revolution brought about by the availability of inexpensive information acquisition, manipulation, and distribution systems. Exploitation of electron and hole conduction in silicon has resulted in electronic memory and logic circuits such as the dynamic random access memory ͑DRAM͒ and microprocessor. Control of the interaction of photons with compound semiconductors has resulted in optical devices such as the laser and optical fiber networks. This revolution has been and will continue to be dependent on our ability to control electronic and photonic material processing techniques for the manufacture of useful devices, circuits and systems. The preparation and detailed processing sequence of a material from crystal growth through device and circuit fabrication determines the microstructure and, therefore, the electronic properties of the material and resulting device and circuit performance, yield, and reliability. Electronic materials include semiconductors, dielectrics, magnetics, piezoelectrics, optoelectronic materials, and optical fibers which may be utilized in crystalline, polycrystalline, or amorphous form. Materials are indeed the sine qua non of electronic and optical devices and circuits.An extensive list of relevant citations through 1997 is noted in Ref. ...

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Effects of Space-Charge Layer Widening in Junction Transistors

Cited by 237 publications

References 3 publications

Heterostructure unipolar spin transistors

Heterostructure unipolar spin transistors

Nonlinear System Analysis in Bipolar Integrated Circuits.

An Electronics Division Retrospective (1952-2002) and Future Opportunities in the Twenty-First Century

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