Heterostructure unipolar spin transistors

Flatté, Michael E.; Vignale, Giovanni

doi:10.1063/1.1886267

Cited by 10 publications

(4 citation statements)

References 24 publications

(34 reference statements)

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“…The gate voltage is used to control the spatial precession of spin during the transport process, and the switch function was realized. Moreover, the structures of unipolar spin transistor [20,21] and hot-electron spin transistor [22,23] are also possible candidates of spin transistor.…”

Section: Spintronic Devicesmentioning

confidence: 99%

General Vacuum Electronics

Feng¹,

Li²,

Hu³

et al. 2020

J Electromagn Eng Sci

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The electron devices in which electrons do not collide with other particles or in which the collision probability is very small in the transport process can be theoretically regarded as general vacuum electron devices. General vacuum electron devices include microfabricated vacuum nano-electronic devices, which can work in atmosphere, and some solid-state electron devices with nanoscale channel for electrons whose material characteristics are close to those of vacuum channels. Vacuum nano-electron devices (e.g., nanotriodes) are expected to be the fundamental elements for high-speed, radiation-resistant large-scale vacuum integrated circuits. The solid-state electron devices with spin semiconductor materials, multiferroics or topological crystal insulators are quite different from traditional semiconductor devices and are expected to operate under novel principles. Understanding vacuum electron devices from a microcosmic perspective and understanding solid-state electron devices from a vacuum perspective will promote a union of vacuum electronics and microelectronics, as well as the formation and development of general vacuum electronics.

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Section: Spintronic Devicesmentioning

confidence: 99%

General Vacuum Electronics

Feng¹,

Li²,

Hu³

et al. 2020

J Electromagn Eng Sci

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“…Two of these are the recently proposed unipolar spin transistors [4][5][6] and magnetic bipolar transistors [7]. In both cases the different electronic structure for spin-up and spin-down carriers in an inhomogeneous magnetic semiconductor is used to separately manipulate the spin-up and spin-down currents and densities.…”

mentioning

confidence: 99%

Unipolar spin transistors and magnetic bipolar transistors

Flatté¹

2005

63rd Device Research Conference Digest, 2005. DRC '05.

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Until recently the field of spintronics has focused on magnetic metals for conducting components [1]. Multilayer spintronic devices, such as giant magnetoresistive (GMR)[2] and magnetic tunnel junction (MTJ) [3] devices, have revolutionized magnetic sensor technology and hold promise for reprogrammable logic and nonvolatile memory applications. In these devices an electric current flows through two ferromagnetic regions, and the device function relies on a significant change in the resistance depending on whether the magnetizations of the two regions are oriented parallel or antiparallel to each other. The device performance improves as the spin polarization of the constituent material approaches 100%, and thus there are continuing efforts to find 100% spin-polarized conducting materials. Interest in magnetic semiconductors for semiconductor spintronics can be traced in part to their near-100% spin polarization; the high spin polarization comes from the small Fermi energies of these materials compared to magnetic metals.Many recent semiconductor spintronic device designs rely on spin-sensitive material properties other than the resistivity, including spin-sensitive gain and spin-selective optical properties, to provide new functional behavior. Two of these are the recently proposed unipolar spin transistors[4-6] and magnetic bipolar transistors[7]. In both cases the different electronic structure for spin-up and spin-down carriers in an inhomogeneous magnetic semiconductor is used to separately manipulate the spin-up and spin-down currents and densities. These semiconductor spintronic device designs offer the potential for novel reprogrammable logic circuits, sources of highly spin-polarized current, differential amplification of spin currents, and polarization-selective optical switches.The unipolar spin transistor was motivated by a fundamental analogy between unipolar ferromagnetic materials and nonmagnetic bipolar materials. The two types of carriers in the bipolar materials, electrons and holes, are analogous to the spin-up and spin-down carriers of one charge type (for specificity electrons) in the ferromagnetic material. In bipolar materials the doping level determines whether electrons or holes are the majority carriers, and the doping level is set when the material is grown. In a nearly 100% spin-polarized ferromagnet, however, the magnetization orientation determines whether spin-up or spin-down carriers are majority carriers. The magnetization orientation, in contrast to the doping level of a material, can be simply manipulated in a device, which provides new opportunities for reprogrammable logic.The analogy between nonmagnetic bipolar materials and unipolar ferromagnetic materials can be extended to devices by comparing a unipolar spin diode (a ferromagnetic material with a 1800 domain wall) and a traditional p-n diode. Shown in Fig. 1(a) are the band edges of the conduction and valence band for a traditional p-n diode in equilibrium. The quasifermi levels are shown as dashed lines. To assist in expl...

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“…room temperature, limiting the design to special materials and very clean interfaces [34][35][36]. Besides the above mentioned spin devices, there are some other spin devices, such as spin valves, and magnetic bipolar transistor (MBT), which is similar to the conventional bipolar transistor [37,38].…”

Section: Chaptermentioning

confidence: 99%

“…ZnOf" + H,0 -ZnO (l) + 20H" ) [37,38]. When the temperature of the solution was elevated, the Zn(NH 3 ) 4 2+ complex reacted with hydroxyl OH" and produced ZnO crystals 109 Chapter 7 [39,40].…”

Section: Chaptermentioning

confidence: 99%

Cobalt-doped zinc oxide dilute magnetic semiconductors for spintronics devices

Liu¹

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In recent years, Dilute Magnetic Semiconductors (DMS) with ZnO as host materials have attracted enormous attention. Structural and magnetic properties of Zno.95Coo.05O thin films grown on rc-type (001) silicon by pulsed laser deposition method were characterized. Contributions by metallic cobalt nanoclusters, oxygen partial pressure and substrate deposition temperature to ferromagnetism were investigated. Experiments have shown that the observed ferromagnetism in Co-doped ZnO thin films was not due to the metallic cobalt nanoclusters. Bound magnetic polaron (BMP) model and Ruderman-Kittel-Kasuya-Yosida (RICKY) interaction are the two mechanisms that most likely explain the origins of Zno.95Coo.05O ferromagnetism. The amount of oxygen vacancies, which could be adjusted by varying the oxygen partial pressure during DMS thin film deposition, affects the polaron density in the BMP model that leads to formation of long range order of magnetic cations. It was also demonstrated that there is an optimal substrate temperature range for maximum saturation magnetization as a balance between the carrier concentration and carrier mean free path have to be achieved. Metal-insulatorsemiconductor structures were fabricated by pulsed laser deposition method to investigate the injection of carriers by an external electric field into the DMS layer. Under different applied electric field, the carrier concentration in the Co-doped ZnO layer was adjusted. This led to a change in the ferromagnetic properties of the DMS layer that could be explained by the RKKY mechanism. Furthermore, ordered DMS nanostructures are attractive for their potential applications in nano-spintronic devices. With an anodic aluminum oxide template, ferromagnetic Zno.95Coo.05O DMS nano-dots with 50 nm diameter were fabricated through pulsed laser deposition method. With vertically aligned ZnO nanowires as templates, ferromagnetic ZnO/Zno 95C00 05O core-shell nanowires were also fabricated using pulsed laser ablation technique. No superparamagnetic or spin glass state was observed from the magnetization-field curves with zero field cooling and field cooling.

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Heterostructure unipolar spin transistors

Cited by 10 publications

References 24 publications

General Vacuum Electronics

General Vacuum Electronics

Unipolar spin transistors and magnetic bipolar transistors

Cobalt-doped zinc oxide dilute magnetic semiconductors for spintronics devices

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