Effects of SiO2 interlayers on the phase change behavior in the multilayer Zn15Sb85/SiO2 materials

Zhang, Rui; Hu, Yifeng; Chou, Qingqian; Lai, Tianshu; Zhu, Xiaoqin

doi:10.1016/j.jallcom.2019.05.201

Cited by 17 publications

(6 citation statements)

References 30 publications

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“…Note the ultrathin SiO 2 nanolayers cannot block electrical conduction, as the multilayered SiO 2 /PCM would still execute reversible phase transitions in devices. [ 39 ] In addition, the glassy SiO 2 nanolayers can add an invariable and large series resistance to the thin Sb resistor, which may help to enhance the anti‐drift ability of the high‐resistance states of the device. It usually took several days to fabricate the PCRAM device, meanwhile the amorphous Sb film in the device had already been deeply aged and arrived at a rather equilibrium state before the electrical characterization.…”

Section: Resultsmentioning

confidence: 99%

Suppressing Structural Relaxation in Nanoscale Antimony to Enable Ultralow‐Drift Phase‐Change Memory Applications

et al. 2023

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Phase‐change random‐access memory (PCRAM) devices suffer from pronounced resistance drift originating from considerable structural relaxation of phase‐change materials (PCMs), which hinders current developments of high‐capacity memory and high‐parallelism computing that both need reliable multibit programming. This work realizes that compositional simplification and geometrical miniaturization of traditional GeSbTe‐like PCMs are feasible routes to suppress relaxation. While to date, the aging mechanisms of the simplest PCM, Sb, at nanoscale, have not yet been unveiled. Here, this work demonstrates that in an optimal thickness of only 4 nm, the thin Sb film can enable a precise multilevel programming with ultralow resistance drift coefficients, in a regime of ≈10−4–10−3. This advancement is mainly owed to the slightly changed Peierls distortion in Sb and the less‐distorted octahedral‐like atomic configurations across the Sb/SiO2 interfaces. This work highlights a new indispensable approach, interfacial regulation of nanoscale PCMs, for pursuing ultimately reliable resistance control in aggressively‐miniaturized PCRAM devices, to boost the storage and computing efficiencies substantially.

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Section: Resultsmentioning

confidence: 99%

Suppressing Structural Relaxation in Nanoscale Antimony to Enable Ultralow‐Drift Phase‐Change Memory Applications

et al. 2023

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“…This finding indicates that Ge 2 Sb 2 Te 5 films prepared with PEEK as the substrate are promising for multi-level storage requirements in PCM applications. 17,18…”

Section: Resultsmentioning

confidence: 99%

Application of Ge₂Sb₂Te₅ phase change films in flexible memory devices

Cao

Gao

et al. 2022

CrystEngComm

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“…With the addition of Y, the band gap of pure Sb becomes larger, which may be caused by the increase of the randomness of atomic configuration. 32 The wide band gap means the lower conductivity and higher conduction activation energy, which requires more energy for electrons to realize the transition from the valence band to the conduction band. 27 In general, large E g is beneficial for materials to obtain lower threshold current.…”

Section: Resultsmentioning

confidence: 99%

Performance Improvement of Sb Phase Change Thin Film by Y Doping

Huang

et al. 2021

ECS J. Solid State Sci. Technol.

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Yttrium-doped Sb phase change thin films were prepared by magnetron sputtering and the in-situ resistance temperature measurement system was used to study the process of phase change thin films. With the addition of yttrium atoms, the crystallization temperature of Sb thin film increases, indicating improvement of their thermal stability and data retention ability. Furthermore, yttrium-doped Sb thin films have higher crystalline and amorphous resistance, which is conducive to the phase transition by Joule heating under electric pulse current. The optical band gap energy increases after yttrium doping, which means lower conductivity and higher conduction activation energy. X-ray diffraction shows that the doping of yttrium atoms can inhibit the grain growth and refine the grain size. X-ray photoelectron spectroscopy was used to examine the chemical state of the element, indicating the formation of a new Y-Sb bond, which verifies the improvement of stability. According to atomic force microscopy images, the yttrium-doped Sb material exhibits a surface morphology with less roughness, implying better interfacial properties and reliability. In general, yttrium-doped Sb thin films have better development in the application of phase change memory.

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Effects of SiO2 interlayers on the phase change behavior in the multilayer Zn15Sb85/SiO2 materials

Cited by 17 publications

References 30 publications

Suppressing Structural Relaxation in Nanoscale Antimony to Enable Ultralow‐Drift Phase‐Change Memory Applications

Suppressing Structural Relaxation in Nanoscale Antimony to Enable Ultralow‐Drift Phase‐Change Memory Applications

Application of Ge₂Sb₂Te₅ phase change films in flexible memory devices

Performance Improvement of Sb Phase Change Thin Film by Y Doping

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Effects of SiO2 interlayers on the phase change behavior in the multilayer Zn15Sb85/SiO2 materials

Cited by 17 publications

References 30 publications

Suppressing Structural Relaxation in Nanoscale Antimony to Enable Ultralow‐Drift Phase‐Change Memory Applications

Suppressing Structural Relaxation in Nanoscale Antimony to Enable Ultralow‐Drift Phase‐Change Memory Applications

Application of Ge2Sb2Te5 phase change films in flexible memory devices

Performance Improvement of Sb Phase Change Thin Film by Y Doping

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Application of Ge₂Sb₂Te₅ phase change films in flexible memory devices