Effects of silicon porosity on physical properties of ZnO films

Bouzourâa, M.-B.; Naciri, A. En; Moadhen, A.; Rinnert, H.; Guendouz, Mohammed; Battie, Yann; Chaillou, Annick; Zaïbi, M.-A.; Oueslati, M.

doi:10.1016/j.matchemphys.2016.03.026

Cited by 47 publications

(22 citation statements)

References 47 publications

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“…Consequently, pSi in most cases exhibits strong yellow/red emission instead of blue 25 , making it unsuitable for white light applications on its own merit. The coupling of the pSi surface with a luminescent material that presents a blue/green emission has been proposed as a route towards white light emission 26 – 30 . Thus, combined pSi/ZnO nanostructures (NS) were studied by many groups as potential candidates for white light emission via optical pumping; pSi/ZnO can be also a promising candidate for electrically-pumped devices given that p -type Si is combined with the intrinsically n-type ZnO 31 , 32 .…”

Section: Introductionmentioning

confidence: 99%

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Broadband luminescence in defect-engineered electrochemically produced porous Si/ZnO nanostructures

Dellis

Pliatsikas

Kalfagiannis

et al. 2018

Sci Rep

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The fabrication, by an all electrochemical process, of porous Si/ZnO nanostructures with engineered structural defects, leading to strong and broadband deep level emission from ZnO, is presented. Such nanostructures are fabricated by a combination of metal-assisted chemical etching of Si and direct current electrodeposition of ZnO. It makes the whole fabrication process low-cost, compatible with Complementary Metal-Oxide Semiconductor technology, scalable and easily industrialised. The photoluminescence spectra of the porous Si/ZnO nanostructures reveal a correlation between the lineshape, as well as the strength of the emission, with the morphology of the underlying porous Si, that control the induced defects in the ZnO. Appropriate fabrication conditions of the porous Si lead to exceptionally bright Gaussian-type emission that covers almost the entire visible spectrum, indicating that porous Si/ZnO nanostructures could be a cornerstone material towards white-light-emitting devices.

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Section: Introductionmentioning

confidence: 99%

“…that identified the luminescence centres in the pSi/ZnO NS 29 . Finally, the PL emission of the NS has been correlated with the porosity of the pSi substrate 30 .…”

Section: Introductionmentioning

confidence: 99%

Broadband luminescence in defect-engineered electrochemically produced porous Si/ZnO nanostructures

Dellis

Pliatsikas

Kalfagiannis

et al. 2018

Sci Rep

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“…In particular, white light emission from ZnO/porous silicon nanocomposites was reported by many authors. [12][13][14][15] Naddaf et al reported room temperature photoluminescence properties of Al-doped ZnO lm grown on porous GaAs by radio frequency magnetron sputtering technique. The authors demonstrate the contribution of porous GaAs to the enhancement of photoluminescence intensity of the ZnO lm in the visible spectral region, which makes ZnO/porous GaAs structure a promising candidate for light emitting devices.…”

Section: Introductionmentioning

confidence: 99%

Comparative study of aqueous solution processed ZnO/GaAs and ZnO/porous GaAs films

et al. 2019

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“…ZnO material system shows chemical and thermal stability at room temperature. Also, it has been actively studied for various applications such as photoelectric devices, solar cells, UV sensors, and piezoelectric devices due to its large free exciton binding energy and ease of control the electronic conductivity [1,2] . Tin oxide (SnO) applied for p-type semiconductor has a large electronic conductivity due to 5s orbital structure of Sn in valence band maximum.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of ZnSn Thin Films Obtained by RF co-sputtering

Lee¹,

Park²,

Kang³

et al. 2016

Journal of the Chosun Natural Science

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The Zn, Sn, and ZnSn thin films were deposited on Si(100) substrate using radio frequency (RF) magnetron cosputtering method. A surface profiler and X-ray photoelectron spectroscopy (XPS) were used to investigate the Zn, Sn, and ZnSn thin films. Thickness of the thin films was measured by a surface profiler. The deposition rates of pure Zn and Sn thin films were calculated with thickness and sputtering time for optimization. From the survey XPS spectra, we could conclude that the thin films were successfully deposited on Si(100) substrate. The chemical environment of the Zn and Sn was monitored with high resolution XPS spectra in the binding energy regions of Zn 2p, Sn 3d, O 1s, and C 1s.

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Effects of silicon porosity on physical properties of ZnO films

Cited by 47 publications

References 47 publications

Broadband luminescence in defect-engineered electrochemically produced porous Si/ZnO nanostructures

Broadband luminescence in defect-engineered electrochemically produced porous Si/ZnO nanostructures

Comparative study of aqueous solution processed ZnO/GaAs and ZnO/porous GaAs films

Fabrication of ZnSn Thin Films Obtained by RF co-sputtering

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