Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs

Sun, Shuxiang; Zhou, Weili; Xia, Peng-Hui; Wang, Wenbin; Duan, Zhiyong; Li, Yuxiao; Zhong, Yinghui; Ding, Peng; Jin, Zhi

doi:10.1088/1674-1056/27/2/028502

Cited by 16 publications

(8 citation statements)

References 20 publications

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“…Consequently, the number of induced defects in heterojunction region increases firstly and reaches the largest value at about 75 keV. [24] To make a comprehensive impact of proton irradiation on device, the incident proton energy was set as 75 keV with dose of 5 × 10 11 cm −2 , 1 × 10 12 cm −2 , and 5 × 10 12 cm −2 .…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane*

et al. 2020

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An anti-radiation structure of InP-based high electron mobility transistor (HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of InP-based HEMTs. Moreover, direct current (DC) and radio frequency (RF) characteristic properties and their reduction rates have been compared in detail between single Si-doped and double Si-doped structures after 75-keV proton irradiation with dose of 5 × 1011 cm−2, 1 × 1012 cm−2, and 5 × 1012 cm−2. DC and RF characteristics for both structures are observed to decrease gradually as irradiation dose rises, which particularly show a drastic drop at dose of 5 × 1012 cm−2. Besides, characteristic degradation degree of the double Si-doped structure is significantly lower than that of the single Si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another Si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects.

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Section: Simulation Results and Discussionmentioning

confidence: 99%

Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane*

et al. 2020

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“…InP-based high electron mobility transistors (HEMTs) are considered as one of the most competitive semiconductor devices for millimeter and terahertz monolithic integrated circuits because of their low noise, low power consumption, and high gain performance. [1][2][3][4][5] In InP-based HEMTs, a sourceto-drain spacing (L SD ) plays a critical role in both DC and RF performance. Changing L SD will affect the source-drain resistance of the devices, as well as the parasitic capacitance of the gate-source-gate-drain, thereby affecting the DC and RF performance of the devices.…”

Section: Introductionmentioning

confidence: 99%

Impact of symmetric gate-recess length on the DC and RF characteristics of InP HEMTs

et al. 2022

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We fabricated a set of symmetric gate-recess devices with gate length of 70 nm. We kept the source-to-drain spacing (L SD) unchanged, and obtained a group of devices with gate-recess length (L recess) from 0.4 μm to 0.8 μm through process improvement. In order to suppress the influence of the kink effect, we have done SiN X passivation treatment. The maximum saturation current density (I D_max) and maximum transconductance (g m,max) increase as L recess decreases to 0.4 μm. At this time, the device shows I D_max=749.6 mA/mm at V GS=0.2 V, V DS=1.5 V, and g m_max=1111 mS/mm at V GS=−0.35 V, V DS=1.5 V. Meanwhile, as L recess increases, it causes parasitic capacitance C gd and g d to decrease, making f max drastically increases. When L recess = 0.8 μm, the device shows f T=188 GHz and f max=1112 GHz.

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“…These applications are based on the excellent properties of the InP-based HEMTs, such as low noise, low power consumption and high gain performance. [1][2][3][4][5][6] However, owing to the high dielectric constant of InP, the transmission loss of InP-based monolithic integrated circuits is large, and the application of InP-based HEMTs in the high-frequency field is restricted. Therefore, it is necessary to replace the substrate of InP HEMTs through heterogeneous integration.…”

Section: Introductionmentioning

confidence: 99%

Heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology

Wang¹,

Wang²,

Feng³

et al. 2022

Chinese Phys. B

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Heterogeneous integrated InP high electron mobility transistors (HEMTs) on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene (BCB) bonding technology. The channel of the new device is In0.7Ga0.3As, and the gate length is 100 nm. A maximum extrinsic transconductance g m,max of 855.5 mS/mm and a maximum drain current of 536.5 mA/mm are obtained. The current gain cutoff frequency is as high as 262 GHz and the maximum oscillation frequency reaches 288 GHz. In addition, a small signal equivalent circuit model of heterogeneous integration of InP HEMTs on quartz wafer is built to characterize device performance.

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Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs

Cited by 16 publications

References 20 publications

Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane*

Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane*

Impact of symmetric gate-recess length on the DC and RF characteristics of InP HEMTs

Heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology

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