Effects of polysilane‐doped spiro‐OMeTAD hole transport layers on photovoltaic properties

Abstract

Effects of polysilane‐doped 2,2′,7,7′‐tetrakis‐(N,N‐di‐p‐methoxyphenylamino)‐9,9′‐spirobifluorene (spiro‐OMeTAD) hole transport layers on photovoltaic properties were investigated by measuring current density–voltage characteristics and incident photon‐to‐current conversion efficiency of CH3NH3PbI3‐based photovoltaic devices. Three kinds of polysilanes were used as the dopants. Due to the polysilane doping, conversion efficiencies of the CH3NH3PbI3 devices using the polysilane‐doped hole transport layers were improved. Microstructures of the CH3NH3PbI3 devices were also investigated. Based on the results of the microstructure analysis, impact of silicon in the polysilanes doped into spiro‐OMeTAD layer on photovoltaic properties were discussed.

Fabrication and Characterization of CH3NH3PbI3 Perovskite Solar Cells Added with Polysilanes

“…However, spiro-OMeTAD is an expensive organic compound and not so much stable at elevated temperatures, which is one of the crucial issues for the development of the perovskite-type solar cells. In our previous works, several polysilanes have been applied for perovskite solar cells [47]. The conversion efficiencies of CH 3 NH 3 PbI 3based solar cells using polysilane-doped hole transport layers were improved compared with those of a conventional CH 3 NH 3 PbI 3 -based solar cells using spiro-OMeTAD.…”

“…Figure 1 shows a schematic illustration of fabricated device structure of the present photovoltaic devices. The detailed fabrication process is described in our previous reports [47][48][49], except for the process of polysilane doping into CH 3 NH 3 PbI 3 solutions. Fluorine-doped tin oxide-(FTO-) coated glass substrates were cleaned in an ultrasonic bath containing acetone and methanol.…”

Fabrication of Perovskite-Type Photovoltaic Devices with Polysilane Hole Transport Layers

“…In Figure 9 Finally, composition ratio of Pb and I atoms presented in Table 2 is very sensitive to photovoltaic performance. Compared with photovoltaic devices fabricated without air blow-assisted spin-coating method [25] [29] [30], the present CH 3 NH 3 PbI 3 layers were Pb-rich and I-poor, suggesting that the CH 3 NH 3 PbI 3 layers were n-type. Types of conductivity of perovskite compounds strongly depend on composition ratio of themselves.…”

“…Very recently, effects of polysilane-doped spiro-OMeTAD hole transport layers were investigated by our group, and the polysilane-doped spiro-OMeTAD hole transport layers were found to increase conversion efficiency of the perovskitetype photovoltaic devices [25]. However, photovoltaic properties of perovskitetype solar cells with polysilanes as hole transport layers have not yet been clarified.…”

Development of Polysilane-Inserted Perovskite Solar Cells

“…The second derives from polysilanes having high stabilities at elevated temperatures up to ~300 °C and therefore expected to act as a protective layer across the perovskite surface. In addition, polysilanes have been applied to perovskite solar cells [14], and the photovoltaic properties were improved, especially by adding decaphenylcyclopentasilane (DPPS) [15,16]. The previously reported perovskite layers were a standard MAPbI3 compound, so further studies focusing on doped MAPbI3 compounds [17][18][19] are required to further elucidate the applicability of DPPS for perovskite solar cells.…”