Polysilane-inserted CH3NH3PbI3 perovskite photovoltaic devices combined with potassium and formamidinium iodides were fabricated and characterized. Decaphenylcyclopentasilane layers were inserted at the perovskite/hole transport interface and annealed across a temperature range of 180–220 °C. These polysilane-coated cells prevented PbI2 formation, and the conversion efficiencies were improved over extended periods of time.

CH3NH3PbI3 perovskite photovoltaic devices treated with a polysilane layer were fabricated and characterized. Decaphenylcyclopentasilane (DPPS) in chlorobenzene solution was deposited at the surface of the perovskite layer, and the resulting device was annealed at 140–260 °C. The photoconversion efficiencies of the DPPS-treated device remained high even after 255 days in ambient air. Raman scattering spectroscopy and ab initio molecular orbital calculations of DPPS suggested that it increased hole transport efficiency in the treated devices, which was confirmed from the high shunt resistances of the DPPS-treated devices.

Effects of polysilane additions on CH3NH3PbI3 perovskite solar cells were investigated. Photovoltaic cells were fabricated by a spin-coating method using perovskite precursor solutions with polymethyl phenylsilane, polyphenylsilane, or decaphenyl cyclopentasilane (DPPS), and the microstructures were examined by X-ray diffraction and optical microscopy. Open-circuit voltages were increased by introducing these polysilanes, and short-circuit current density was increased by the DPPS addition, which resulted in the improvement of the photoconversion efficiencies to 10.46%. The incident photon-to-current conversion efficiencies were also increased in the range of 400~750 nm. Microstructure analysis indicated the formation of a dense interfacial structure by grain growth and increase of surface coverage of the perovskite layer with DPPS, and the formation of PbI2 was suppressed, leading to the improvement of photovoltaic properties.

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