Polysilane-inserted CH3NH3PbI3 perovskite photovoltaic devices combined with potassium and formamidinium iodides were fabricated and characterized. Decaphenylcyclopentasilane layers were inserted at the perovskite/hole transport interface and annealed across a temperature range of 180–220 °C. These polysilane-coated cells prevented PbI2 formation, and the conversion efficiencies were improved over extended periods of time.
Perovskite solutions with potassium (K) and formamidinium (FA) iodides added were used to fabricate perovskite solar cells. Since the lattice constants increased with the addition of FA, the substitution by FA of the CH 3 NH 3 (MA) site of the perovskite crystal was confirmed. In addition, conversion efficiencies were improved for devices with K and FA added compared with standard devices. The presence of K in the perovskite solution promoted formation of highly (002)-oriented crystals, which decreased the lattice strain of perovskite crystals. Filling the MA defect sites with K and FA can prevent the recombination of electrons and holes and improve the photovoltaic characteristics.
Perovskite solar cells, in which decaphenylcyclopentasilane (DPPS) layers were formed on the surface of the CH3NH3PbI3-bsaed perovskite layer, were developed. The photovoltaic properties were improved by controlling the annealing temperature of the perovskite layer. For perovskite layers annealed at high temperatures in the range of 180~220 °C, the perovskite crystals were densely formed and the surface coverage of the perovskite layer was improved. The DPPSlaminated devices suppressed the formation of PbI2 crystals and the stability was improved by the DPPS layer. Furthermore, the conversion efficiencies were improved over extended periods of time.
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