Effects of Plasma Irradiation in Arsenic Plasma Doping Using Overhang Test Structures

Kubota, Masafumi; Hayashi, Shigenori; Ogura, Mototsugu; Sasaki, Y.; Okada, Susumu; Yamabe, Kikuo

doi:10.7567/jjap.52.021301

Cited by 2 publications

(1 citation statement)

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“…However, PIII process integration is not straightforward since the exposure of Si wafers to plasma can also result in etching [4], deposition, and implantation, depending on the plasma conditions. Recently reported results show a relatively thick (5-10 nm) native oxide rich in arsenic after high fluence PIII on Si surfaces [2,[5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface

Vishwanath

Demenev

Giubertoni

et al. 2015

Applied Surface Science

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a b s t r a c tHigh fluence (>10 15 ions/cm 2 ) low-energy (<2 keV) plasma immersion ion implantation (PIII) of AsH 3 + on (1 0 0) silicon was investigated, with the focus on stability and retention of the dopant. At this dose, a thin (∼3 nm) amorphous layer forms at the surface, which contains about 45% arsenic (As) in a silicon and oxygen matrix. The presence of silicon indicates that the layer is not only a result of deposition, but predominantly ion mixing. High fluence PIII introduces high concentration of arsenic, modifying the stopping power for incoming ions resulting in an increased deposition. When exposed to atmosphere, the arsenic rich layer spontaneously evolves forming arsenolite As 2 O 3 micro-crystals at the surface. The micro-crystal formation was monitored over several months and exhibits typical crystal growth kinetics. At the same time, a continuous growth of native silicon oxide rich in arsenic was observed on the exposed surface, suggesting the presence of oxidation enhancing factors linked to the high arsenic concentration at the surface.

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