Effects of N2O plasma treatment on perhydropolysilazane spin-on-dielectrics for inter-layer-dielectric applications

Structural Study of Silica Coating Thin Layers Prepared from Perhydropolysilazane: Substrate Dependence and Water Penetration Structure

“…The major concern with using silicon-based materials is that the formation behavior of SiO 2 layers may change depending on the nature of the surface or condition of the PHPS-protected material. Therefore, many studies have focused on silicon-based materials and studied their SiO 2 network formation mechanisms [6][7][8][9].…”

“…Nevertheless, further research on the nano-structure and detailed synthesis mechanisms for the preparation of SiO2 layers is important for the development of silicon-based coating materials. A variety of techniques, such as Fourier-transform infrared spectroscopy (FT-IR) [8,11], X-ray photoelectron spectroscopy (XPS) [8,11], and neutron reflectivity (NR) [5], have been used to study the structure of PHPS-derived silica (PDS) thin layers. Since the thickness, density, and roughness of the thin layer samples can be determined by NR techniques [12,13], here we use NR techniques to elucidate the nano-structure of PDS thin layers.…”

Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors

“…Infrared spectra are shown in Figure while Table provides the IR peak assignments. ,− It has previously been shown that, above 300 °C, the hydrolysis of Si–N and Si–H bonds leads to the formation of a SiO 2 network. ,, In the case of CAPS, the main absorption bands are observed at approximately 1180 and 3360 cm –1 and correspond to the bend and stretch modes of N–H, respectively. In addition, bands at 920, 840, and 2160 cm –1 indicate the presence of Si–N and Si–H bonds in the CAPS film.…”

Solution-processed SiO2 gate insulator formed at low temperature for zinc oxide thin-film transistors

“…Much research is now being undertaken to optimise the conversion method in order to lower further the processing temperature. [12][13][14][15][16] For example, Bauer et al 12 introduced moisture during the heat treatment, which had a signicant effect on accelerating the reaction, although it still proved difficult to form a fully converted SiO 2 lm at temperatures lower than 150 C.…”

“…Further FTIR data, including a table of peak assignments, are provided as ESI. † It is common that SiO 2 networks can be formed by hydrolysis of Si-NH bonds and subsequent formation of Si-O bonds at temperatures above 300 C. 11,15,16 As shown in Fig. 3, the cured PHPS lm reveals peaks corresponding to N-H bonds (stretch at 3360 cm À1 , bend at 1180 cm À1 ), Si-H bonds (stretch at 2160 cm À1 ) and Si-N bonds (stretch at 920 cm À1 and 840 cm À1 in Si-N-Si) with a weak Si-O bond (rock at 460 cm À1 , stretch at 1060 cm À1 ).…”