1972
DOI: 10.1143/jpsj.32.1550
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Effects of Magnetic Field on Electron Transfer and Velocity-Field Characteristic in Gallium Arsenide

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“…This has been studied in detail for n-GaAs and the TEE. 192,193 In SI GaAs, the critical voltage for the onset of domain formation is found to decrease at low transverse magnetic fields and to increase at higher fields. 88 The decrease is caused by the Hall effect because it adds a local electric field to the externally applied bias, which means that less bias is needed to provide the required total electric field.…”
Section: B Discussion Of Experimental Resultsmentioning
confidence: 99%
“…This has been studied in detail for n-GaAs and the TEE. 192,193 In SI GaAs, the critical voltage for the onset of domain formation is found to decrease at low transverse magnetic fields and to increase at higher fields. 88 The decrease is caused by the Hall effect because it adds a local electric field to the externally applied bias, which means that less bias is needed to provide the required total electric field.…”
Section: B Discussion Of Experimental Resultsmentioning
confidence: 99%