Effects of magnesium film thickness and annealing temperature on formation of Mg2Si films on silicon (1 1 1) substrate deposited by magnetron sputtering

Xiao, Qingquan; Quan, Xie; Shen, Xiangqian; Zhang, Jinmin; Yu, Zhiqiang; Zhao, Kun

doi:10.1016/j.apsusc.2011.04.032

Cited by 20 publications

(6 citation statements)

References 22 publications

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“…The reaction leading to partial decomposition of silicide and formation of magnesia at the surface were previously reported at higher temperature in thicker silicide layers. 30,34 This self-limited process is followed by a decrease of Mg oxide peak while oxygen atoms still incorporate on top of the surface in region (III).…”

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confidence: 99%

Surface-interface exploration of Mg deposited on Si(100) and oxidation effect on interfacial layer

Sarpi

Daineche

Girardeaux

et al. 2015

Applied Physics Letters

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International audienceUsing scanning tunneling microscopy and spectroscopy, Auger electron spectroscopy, and low energy electron diffraction, we have studied the growth of Mg deposited on Si(100)-(2 x 1). Coverage from 0.05 monolayer (ML) to 3 ML was investigated at room temperature. The growth mode of the magnesium is a two steps process. At very low coverage, there is formation of an amorphous ultrathin silicide layer with a band gap of 0.74 eV, followed by a layer-by-layer growth of Mg on top of this silicide layer. Topographic images reveal that each metallic Mg layer is formed by 2D islands coalescence process on top of the silicide interfacial layer. During oxidation of the Mg monolayer, the interfacial silicide layer acts as diffusion barrier for the oxygen atoms with a decomposition of the silicide film to a magnesium oxide as function of O2 exposure

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confidence: 99%

Surface-interface exploration of Mg deposited on Si(100) and oxidation effect on interfacial layer

Sarpi

Daineche

Girardeaux

et al. 2015

Applied Physics Letters

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“…Similar oxidation mechanisms have previously been reported for thicker magnesium silicide films (tens to hundreds of nanometers range) as a consequence of Mg2Si dissociation. Note that several experimental conditions were used in these cases, regarding the origin of the oxygen environment (presence or not of an oxygen-contaminated atmosphere) and the thermal activation brought to the system, namely at 300°C [8], over 400°C [24] and 450°C [13]. All these reports, however, were based on a static observation of the products of the oxidation reaction.…”

Section: Resultsmentioning

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Growth, stability and decomposition of Mg2Si ultra-thin films on Si (100)

Sarpi

Zirmi

Putero

et al. 2018

Applied Surface Science

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International audienceUsing Auger Electron Spectroscopy (AES), Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and Low Energy Electron Diffraction (LEED), we report an in-situ study of amorphous magnesium silicide (Mg2Si) ultra-thin films grown by thermally enhanced solid-phase reaction of few Mg monolayers deposited at room temperature (RT) on a Si(100) surface. Silicidation of magnesium films can be achieved in the nanometric thickness range with high chemical purity and a high thermal stability after annealing at 150 °C, before reaching a regime of magnesium desorption for temperatures higher than 350 °C. The thermally enhanced reaction of one Mg monolayer (ML) results in the appearance of Mg2Si nanometric crystallites leaving the silicon surface partially uncovered. For thicker Mg deposition nevertheless, continuous 2D silicide films are formed with a volcano shape surface topography characteristic up to 4 Mg MLs. Due to high reactivity between magnesium and oxygen species, the thermal oxidation process in which a thin Mg2Si film is fully decomposed (0.75 eV band gap) into a magnesium oxide layer (6–8 eV band gap) is also reported

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“…This procedure was consistent with Xiao's procedure. [ 36 ] To study the oxidation behavior of Mg 2 Si thin films, the aforementioned samples were annealed at different annealing temperatures. The annealing temperature was controlled in the range between 380 and 480 °C with a step of 20 °C.…”

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confidence: 99%

The Degradation Mechanism of Mg₂Si during Exploitation at High Temperature

Liao

Xie

et al. 2021

Physica Status Solidi (b)

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Oxidized Mg2Si films are annealed in low vacuum at various annealing temperature, and the degradation mechanism of Mg2Si during exploitation at high temperature is investigated. The crystal structure, surface morphology, depth profile, Raman scattering, and electrical properties are measured by X‐ray diffraction (XRD), field emission scanning electron microscopy (FESEM), X‐ray photoelectron spectroscopy (XPS), Raman spectroscopy, and Hall effect system, respectively. XRD results show that MgO exists apparently in Mg2Si films, and as the annealing temperature increases, the content of MgO increases. The surfaces of films present distinct hexagon structures. The results of depth profiles show that the oxygen content decreases gradually from the surface to the subsurface. Raman spectroscopy analysis suggests that as the annealing temperature increases, the intensity of MgO peak enhances gradually. Hall measurement results indicate that the carrier concentration and mobility decrease significantly with the increase in annealing temperature. The films show n‐type at lower annealing temperature, while they present p‐type at higher annealing temperature, which indicates obvious conversions from n‐ to p‐type.

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Effects of magnesium film thickness and annealing temperature on formation of Mg2Si films on silicon (1 1 1) substrate deposited by magnetron sputtering

Cited by 20 publications

References 22 publications

Surface-interface exploration of Mg deposited on Si(100) and oxidation effect on interfacial layer

Surface-interface exploration of Mg deposited on Si(100) and oxidation effect on interfacial layer

Growth, stability and decomposition of Mg2Si ultra-thin films on Si (100)

The Degradation Mechanism of Mg₂Si during Exploitation at High Temperature

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Effects of magnesium film thickness and annealing temperature on formation of Mg2Si films on silicon (1 1 1) substrate deposited by magnetron sputtering

Cited by 20 publications

References 22 publications

Surface-interface exploration of Mg deposited on Si(100) and oxidation effect on interfacial layer

Surface-interface exploration of Mg deposited on Si(100) and oxidation effect on interfacial layer

Growth, stability and decomposition of Mg2Si ultra-thin films on Si (100)

The Degradation Mechanism of Mg2Si during Exploitation at High Temperature

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The Degradation Mechanism of Mg₂Si during Exploitation at High Temperature