Effects of laser parameters on optoelectronic properties of polycrystalline silicon films prepared by two-step annealing process

Lin, H.K.; Huang, U. G.; Hong, Sunguk

doi:10.1007/s00170-017-0767-2

Cited by 3 publications

(2 citation statements)

References 21 publications

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“…One feasible common solution was to obtain polycrystalline thin films by high‐temperature annealing after film deposition, which required both high‐temperature resistant equipment and unattainable optimized parameters. [ 24,25 ] The chemical synthesis method offers an alternative “bottom–up” approach that can synthesize high‐quality products, including single‐crystal thin films [ 26–28 ] and single‐crystal nanowires. [ 29–31 ] For example, Watson et al.…”

Section: Improvements In Fabrication Methodsmentioning

confidence: 99%

“…One feasible common solution was to obtain polycrystalline thin films by hightemperature annealing after film deposition, which required both hightemperature resistant equipment and unattainable optimized parameters. [24,25] The chemical synthesis method offers an alternative "bottom-up" approach that can synthesize highquality products, including single crystal thin films [26][27][28] and singlecrystal nanowires. [29][30][31] For example, Watson et al reported a method for fabrication of functional quantum dots by nanoskiving GaAs/AlGaAs quantumdotinnanowire systems that were grown using the autocatalytic vaporliquidsolid (VLS) approach (Figure 4b).…”

Section: Adaptation For Semiconductor Materialsmentioning

confidence: 99%

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Recent Progress in the Nanoskiving Approach: A Review of Methodology, Devices, and Applications

Fang

Yan

Geng

2021

Adv Materials Technologies

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Nanoskiving is a unique nanomanufacturing method that can be used to cut out nanostructures directly with well‐controlled shapes and sizes. Over the past 10 years, nanoskiving techniques have evolved in terms of optimization of the sectioning parameters and development of the transfer and alignment approaches. In addition, the range of compatible materials for nanoskiving is expanding via combination of the technique with other bottom–up and top–down methods; for example, soft materials such as block polymers and hard materials such as cemented carbide and semiconductor materials are now able to be nanosized successfully, despite previously being considered incompatible with nanoskiving technology. The preparation of these structures by the nanoskiving method opens a convenient door to verification of the application of this technique to device miniaturization in fields including optics, electrochemistry, electronics, and biology. This review outlines the advances made in nanoskiving, including those in the fabrication process, the development of suitable applications, and the challenges and opportunities for future exploration of the technology.

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Section: Improvements In Fabrication Methodsmentioning

confidence: 99%

Section: Adaptation For Semiconductor Materialsmentioning

confidence: 99%

Recent Progress in the Nanoskiving Approach: A Review of Methodology, Devices, and Applications

Fang

Yan

Geng

2021

Adv Materials Technologies

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Scalable Approach for Amorphous Thin Silicon Films Near‐IR Laser‐Induced Crystallization Using Nickel Absorption Layer

Serdobintsev

Kozhevnikov

Starodubov

et al. 2019

Physica Status Solidi (a)

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Technology for thin polycrystalline silicon films preparation is crucial for development of novel semiconductor devices, including flexible electronics. A method for thin polycrystalline silicon film preparation utilizing deposited nickel absorption layer which allows use of inexpensive 1064 nm pulsed YAG: Nd laser for laser annealing of magnetron-sputtered amorphous silicon is reported here. Film morphology changes are visualized with scanning electron microscopy, its chemical composition and Ni fate upon laser irradiation are studied using X-ray energy dispersion analysis and secondary ion mass spectrometry. Silicon crystalline structure changes and its homogeneity are characterized using Raman spectroscopy utilizing mapped spectral measurements. Range of laser radiation energy fluence (J cm À2 ) is established which allowed for preparation of fully polycrystalline silicon film with crystalline silicon Raman peak position and width comparable to that of single-crystalline material. Nickel film is found to ablate substantially upon irradiation, leaving remains that can be easily removed by chemical etching.

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Phosphorous-Doped $\alpha$ -Si Film Crystallization Using Heat-Assisted Femtosecond Laser Annealing

Zhan

et al. 2020

IEEE Trans. Semicond. Manufact.

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Effects of laser parameters on optoelectronic properties of polycrystalline silicon films prepared by two-step annealing process

Cited by 3 publications

References 21 publications

Recent Progress in the Nanoskiving Approach: A Review of Methodology, Devices, and Applications

Recent Progress in the Nanoskiving Approach: A Review of Methodology, Devices, and Applications

Scalable Approach for Amorphous Thin Silicon Films Near‐IR Laser‐Induced Crystallization Using Nickel Absorption Layer

Phosphorous-Doped $\alpha$ -Si Film Crystallization Using Heat-Assisted Femtosecond Laser Annealing

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