“…Relative density is found to increase with sintering temperature and reaches a saturated value of 96% at 650 °C. A slight decrease in the densification is observed with further increase in sintering temperature, which may be due to the irregular grain growth . The results indicate that the CMO ceramic can be well densified at 650 °C.…”
Section: Resultsmentioning
confidence: 79%
“…A slight decrease in the densification is observed with further increase in sintering temperature, which may be due to the irregular grain growth. 31 The results indicate that the CMO ceramic can be well densified at 650 °C.…”
A new glass-free low temperature sinterable CuMoO 4 ceramic was prepared by a solid state ceramic route. The structural, microstructural, electron dispersive spectrum, and X-ray photoelectron spectroscopy analysis revealed the quality of the material synthesized. The CuMoO 4 ceramic sintered at 650 °C exhibits densification of 96% and low coefficient of thermal expansion (CTE) of 4.6 ppm/°C in the temperature range of 25−500 °C. It has relative permittivity (ε r ) of 7.9, quality factor (Qf) of 53 000 GHz, and temperature coefficient of resonant frequency (τ f ) of −36 ppm/°C (25−85 °C) at 12.7 GHz. The sintered ceramic also shows ε r of 11 and low dielectric loss (tan δ) of 2.7 × 10 −4 at the frequency of 1 MHz. The full width half-maximum (fwhm) of A 1g Raman mode of CuMoO 4 ceramic at different sintering temperatures correlate well with the Qf values. The low sintering temperature, low relative permittivity, high-quality factor, and matching coefficient of thermal expansion to that of Si make CuMoO 4 a suitable candidate for ultralow temperature cofired ceramic (ULTCC) applications.
“…Relative density is found to increase with sintering temperature and reaches a saturated value of 96% at 650 °C. A slight decrease in the densification is observed with further increase in sintering temperature, which may be due to the irregular grain growth . The results indicate that the CMO ceramic can be well densified at 650 °C.…”
Section: Resultsmentioning
confidence: 79%
“…A slight decrease in the densification is observed with further increase in sintering temperature, which may be due to the irregular grain growth. 31 The results indicate that the CMO ceramic can be well densified at 650 °C.…”
A new glass-free low temperature sinterable CuMoO 4 ceramic was prepared by a solid state ceramic route. The structural, microstructural, electron dispersive spectrum, and X-ray photoelectron spectroscopy analysis revealed the quality of the material synthesized. The CuMoO 4 ceramic sintered at 650 °C exhibits densification of 96% and low coefficient of thermal expansion (CTE) of 4.6 ppm/°C in the temperature range of 25−500 °C. It has relative permittivity (ε r ) of 7.9, quality factor (Qf) of 53 000 GHz, and temperature coefficient of resonant frequency (τ f ) of −36 ppm/°C (25−85 °C) at 12.7 GHz. The sintered ceramic also shows ε r of 11 and low dielectric loss (tan δ) of 2.7 × 10 −4 at the frequency of 1 MHz. The full width half-maximum (fwhm) of A 1g Raman mode of CuMoO 4 ceramic at different sintering temperatures correlate well with the Qf values. The low sintering temperature, low relative permittivity, high-quality factor, and matching coefficient of thermal expansion to that of Si make CuMoO 4 a suitable candidate for ultralow temperature cofired ceramic (ULTCC) applications.
“…Furthermore, at higher temperatures and frequencies the losses rapidly increased. [4] In the case of other lanthanum doped BST compositions: Ba0.60Sr0.30TiO3 [10], Ba0.74Sr0.26TiO3 [11] and Ba0.8Sr0.2TiO3 [12], no colossal permittivity has been observed. Ba0.60Sr0.30TiO3 showed a room temperature permittivity of 2750.2 and tan of 0.0137 at 10 kHz with 0.5 mol.% of lanthanum addition i.e.…”
Section: Introductionmentioning
confidence: 92%
“…a significantly reduced permittivity (>7000) compared to undoped BST [10]. Both the Ba0.74Sr0.26TiO3 and Ba0.8Sr0.2TiO3 compositions also showed a relative permittivity under 10,000 and a low tan < 0.015 at room temperature, depending on the amount of lanthanum and other dopants [11], [12]. It is apparent that the dielectric properties are influenced not only by the Ba:Sr ratio and the amount of lanthanum and other dopants present but also by the various fabrication routes by which the ceramics are prepared [5][6][7].…”
The effect of titanium excess and deficiency on the microstructure and dielectric properties of lanthanum doped Ba 0.55 Sr 0.45 TiO 3 with colossal permittivity
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