Effects of Interface Donor Trap States on Isolation Properties of Detectors Operating at High Luminosity LHC (HL-LHC)

Moscatelli, F.; Passeri, D.; Morozzi, A.; Mattiazzo, Serena; Betta, G.-F. Dalla; Dragicevic, M.; Bilei, G. M.

doi:10.1109/tns.2017.2709815

Cited by 22 publications

(38 citation statements)

References 29 publications

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“…Devices under study include: (a) MOS capacitors, gate-controlled diodes (GDs) and MOSFETs fabricated at Fondazione Bruno Kessler (FBK, Italy) on 6" n-type and p-type SiSi Direct Wafer Bonded Wafers from ICEMOS Technology Ltd, Float Zone <100> oriented wafer, with a nominal resistivity higher than 3 kΩ•cm; (b) MOS capacitors and gated-diodes fabricated at Hamamatsu Photonics (HPK) on 6" high-resistivity p-type Float Zone, <100> oriented wafer, with p-stop or with p-spray layer implanted at the surface to isolate adjacent n + electrodes; (c) two different processes of Infineon Technology (IFX): (i) IFX devices on high-resistivity p-type Float Zone (FZ)⟨100⟩ 8'' wafers (ii) IFX devices on high-resistivity p-type Float Zone(FZ)⟨100⟩ 6'' wafers with different processes and thermal budget. Further details about the test structures description and the experimental procedure and measurement setup are detailed explained in previous related works [11][12][13].…”

Section: Methodsmentioning

confidence: 99%

TCAD advanced radiation damage modeling in silicon detectors

Morozzi¹,

Moscatelli²,

Passeri³

et al. 2020

Proceedings of the 28th International Workshop on Vertex Detectors — PoS(Vertex2019)

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In this work we present a methodology to develop a surface and bulk TCAD radiation damage effects model which enables a predictive insight into the electrical behavior of novel solid-state detectors up to the particle fluences expected at the end of HL-LHC. To better understand, in a comprehensive framework, the complex and articulated phenomena related to the radiation damage mechanisms several TCAD simulations have been carried out and compared with measurements performed on test structures and sensors. Surface radiation damage effects have been deeply investigated on both p-type and n-type substrate test structures exposed to X-ray irradiation at doses in the range 0.05-100 Mrad(SiO2). The complete bulk and surface radiation damage model findings have been then compared with available measurements in terms of charge collection efficiency up to 2.0×10 16 1 MeV equivalent neq/cm 2 .

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Section: Methodsmentioning

confidence: 99%

TCAD advanced radiation damage modeling in silicon detectors

Morozzi¹,

Moscatelli²,

Passeri³

et al. 2020

Proceedings of the 28th International Workshop on Vertex Detectors — PoS(Vertex2019)

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“…The model is taken from Ref. [8] and contains two acceptor and one donor type traps. This model was chosen as one amongst several available models as it is being widely used in the community.…”

Section: Simulation Methods and Setupmentioning

confidence: 99%

TCAD simulations of pixel sensors for the ATLAS ITk upgrade and performance of annealed planar pixel modules

et al. 2018

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A: For the high luminosity phase of the Large Hadron Collider to start operation around 2026, a major upgrade of the ATLAS Inner Tracker (ITk) is in preparation. Thanks to their low power dissipation and high charge-collection efficiency after irradiation, thin planar pixel modules are the baseline option to instrument all, except for the innermost layer of the pixel detector. To optimise the sensor layout for a pixel cell size of 50 × 50 µm 2 , TCAD simulations are being performed. Charge-collection efficiency, electronic noise and electrical-field properties are investigated. A radiation-damage model is employed in TCAD simulations to estimate the performance before-and after irradiation. The impact of storage time at room temperature for the ITk pixel detector during maintenance periods are estimated using sensors irradiated up to a fluence of 5×10 15 n eq /cm 2 . Pixel sensors of 100 − 150 µm thickness, interconnected to FE-I4 read-out chips with pixel dimensions of 50 × 250 µm 2 , are characterised using the testbeam facilities at the CERN-SPS and DESY. The charge-collection and hit efficiencies are compared before and after annealing at room temperature for up to one year.

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“…Unless otherwise specified, the sensors are modeled without radiation damage. The effects of radiation damage are approximated by reducing the collected charge according to the n + -in-n planar sensor results based on combining TCAD simulations from the Perugia [31] and New Delhi models [32] with drift, diffusion, and digitization presented in Ref. [10].…”

Section: Simulationmentioning

confidence: 99%

Nonlocal thresholds for improving the spatial resolution of pixel detectors

Nachman

Spies

2019

J. Inst.

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Pixel detectors only record signals above a tuned threshold in order to suppress noise. As sensors become thinner, pitches decrease, and radiation damage reduces the collected charge, it is increasingly desirable to lower thresholds. By making the simple, but powerful observation that hit pixels tend to be spatially close to each other, we introduce a scheme for dynamic thresholds. This dynamic scheme can enhance the signal efficiency without significantly increasing the occupancy. In addition to presenting a selection of empirical results, we also discuss some potential methods for implementing dynamic thresholds in a realistic readout chip for the Large Hadron Collider or other future colliders.

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Effects of Interface Donor Trap States on Isolation Properties of Detectors Operating at High Luminosity LHC (HL-LHC)

Cited by 22 publications

References 29 publications

TCAD advanced radiation damage modeling in silicon detectors

TCAD advanced radiation damage modeling in silicon detectors

TCAD simulations of pixel sensors for the ATLAS ITk upgrade and performance of annealed planar pixel modules

Nonlocal thresholds for improving the spatial resolution of pixel detectors

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