Effects of insulator surface roughness on Al-alloy film properties and crystallographic orientation in Al-alloy/Ti/insulator structure

Onoda, Hiroshi; Narita, Tadashi; Touchi, Kenshin; Hashimoto, Kazuhito

doi:10.1109/relphy.1996.492074

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Silicon Carbide and Related Materials 20091

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Cited by 8 publications

(1 citation statement)

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“…Using a linear least-squares method, the activation energy was estimated to be E a ~ 1.6 eV. This E a value is clearly higher than the data previously reported for EM failure of ordinary Al electrodes formed laterally on Si substrates [7][8][9]. This difference may also be the result of the peculiar configuration of the samples.…”

Section: Silicon Carbide and Related Materials 2009mentioning

confidence: 57%

Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction Temperatures

Tanimoto

Nishio

Suzuki

et al. 2010

MSF

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Abstract. It is strongly desired to operate SiC power devices at higher junction temperatures (T j ), but that often entails problems because they contain a variety of materials with thermal activity or weakness. An example of such troubles is the steep increase in resistance of the Al electrode in the source (or emitter) contact holes, caused by electromigration (EM). In this work, EM reliability of the contact hole in SiC power devices was evaluated for an improved Al electrode sandwiched between thin TaN layers. An estimated mean time to failure (MTTF) of approximately 3400 years was achieved under conditions of T j = 300°C and J = 10 4 A/cm 2 .

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Section: Silicon Carbide and Related Materials 2009mentioning

confidence: 57%