Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors

Yuan, Gu; Zhang, YG; Wang, Kai; Fang, Xiang; Li, C.; Zhou, Lin; Li, A.Z.; Li, Hsby

doi:10.1016/j.jcrysgro.2012.12.049

Cited by 28 publications

(19 citation statements)

References 19 publications

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“…[49][50][51] In addition, recently, the effect of low dark current, high responsivity, growth temperature, and anodic oxide passivation layer on the InGaAs/InP photodetectors have been investigated for increasing the infrared photodetector performance. [55][56][57] In this present work, the In x Ga 1-x As/InP structures for photodetector applications were reported. The three In x Ga 1-x As thin film layers were grown on n-type InP substrates by using a solid source MBE system.…”

Section: Introductionmentioning

confidence: 87%

Structural and electrical characterizations of InxGa1-xAs/InP structures for infrared photodetector applications

Asar

Özçelik

Özbay

2014

Journal of Applied Physics

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Three InGaAs/InP structures for photodetector applications were grown with different indium compositions by MBE technique. The structural properties of the samples have been obtained by means of high resolution X-ray diffraction and secondary ion mass spectrometry measurements. Three InGaAs/InP metal-semiconductor-metal devices were fabricated at room temperature. The experimental forward and reverse bias current–voltage characteristics of the devices such as ideality factor, barrier height, and saturation current were evaluated considering the structural properties of the grown structures. The carrier recombination lifetime and diffusion length in the devices were also calculated using carrier density and mobility data obtained with Hall effect measurement at room temperature. It was determined that all room temperature fabricated devices improved the Schottky barrier height. Especially, the device fabricated on the lower mismatched structure exhibited barrier height enhancement from 0.2 eV, which is the conventional barrier height to 0.642 eV. In addition, the obtained results show that the room temperature fabricated devices on InGaAs/InP structures can be convenient for infrared photodetector applications.

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Section: Introductionmentioning

confidence: 87%

Structural and electrical characterizations of InxGa1-xAs/InP structures for infrared photodetector applications

Asar

Özçelik

Özbay

2014

Journal of Applied Physics

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“…The material samples M1 and M2 with InAlAs /In 0.83 Ga 0.17 As/InAlAs p-i-n epitaxial structure were grown on semi-insulating InP substrate by Gas Source Molecular Beam Epitaxy (GSMBE) [14,17]. The epitaxial structure consisted of a 1.9 lm N-InAlAs buffer layer with a doping concentration of about 3 Â 10 18 cm À3 , a 1.5 lm n-In 0.83 Ga 0.17 As absorption layer (3 Â 10 16 cm À3 ) and a 0.6 lm P-InAlAs cap layer (2 Â 10 18 cm À3 ).…”

Section: Experiments Detailsmentioning

confidence: 99%

Effect of proton irradiation on extended wavelength In0.83Ga0.17As infrared detector

Huang

Shi

et al. 2015

Infrared Physics & Technology

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“…The extended wavelength InGaAs detector can cover 1.0-2.5 lm detection waveband with 0.83 indium content, and it has several advantages such as high responsivity, wonderful uniformity and low energy consumption, so it can be widely used in space remote sensing, passive night vision and so on [1][2][3][4][5][6][7][8]. It is a well-known fact that the research of Ohmic contacts is a fundamental topic for semiconductors, and Ohmic contact is very important for semiconductor detector [9][10][11][12][13], because it affects the quantum efficiency and response time, and generally, the Ohmic contact resistance is the-smaller-the-better.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of Ohmic contacts of In0.83Ga0.17As photodiodes and its correlation with interface microstructure

et al. 2015

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The temperature-dependent electrical properties of Au Ohmic contacts of In 0.83 Ga 0.17 As photodiodes were systematically investigated in the temperature range 163-373 K. For two annealed sample, the novel temperature behavior of the specific contact resistivity q sc was observed and exhibits similarity to that of 'metal,' describable by a T 2.01 and T 2.19 dependence. The microscopic interfacial analysis from transmission electron microscope (TEM) indicated that the Au protrusions penetrating into the contact layer, with a density of 9 9 10 7 and 2.0 9 10 8 cm -2 , respectively, could cause this phenomenon by acting as the more efficient conduction channels. By fabricating the extended wavelength In 0.83-Ga 0.17 As photodiode and deducing the series resistance from the current-voltage-temperature (I-V-T) characteristics, it is proved that the series resistance is mainly caused by the contact resistance of the metal-semiconductor (MS) interface. The results are very meaningful for the application of the extended wavelength In 0.83 Ga 0.17 As photodiode.

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Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors

Cited by 28 publications

References 19 publications

Structural and electrical characterizations of InxGa1-xAs/InP structures for infrared photodetector applications

Structural and electrical characterizations of InxGa1-xAs/InP structures for infrared photodetector applications

Effect of proton irradiation on extended wavelength In0.83Ga0.17As infrared detector

Temperature dependence of Ohmic contacts of In0.83Ga0.17As photodiodes and its correlation with interface microstructure

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