Effects of germanium incorporation on optical performances of silicon germanium passive devices for group-IV photonic integrated circuits

Cho, Seongjae; Park, Joonsuk; Kim, Hyungjin; Sinclair, Robert; Park, Byung‐Gook; Harris, James S.

doi:10.1016/j.photonics.2013.07.012

Cited by 6 publications

(2 citation statements)

References 27 publications

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“…This was attributed to the absence of high-temperature finishing in-situ annealing 850 °C in the case of Sample 2, through which the necessity of in-situ annealing after lowtemperature growth can be confirmed to secure higher predictability and stability of the center peak position. SiGe waveguide needs to be performed for less optical loss [15]. Although several Ge surface finishing methods based on wet etching and plasma techniques have been reported [18,19], the emphases have been placed only on applications in electronic devices, and the capacitance vs. voltage (C-V) curves are the main indices in those cases without studies of the changes in the optical properties of the Ge surface.…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, Ge is considered as an optical material for active devices, such as laser and light-emitting diodes (LEDs) [11,12]. Ge can also be adopted to other active and passive devices including modulators, optical waveguides and photodetectors owing to its higher refractive index (n Ge = 4.0) than Si (n Si = 3.47), optical confinement stronger than Si and higher electron and hole mobilities, 3,900 cm 2 /V·s and 1,900 cm 2 /V·s, respectively [6,[13][14][15][16]. In addition, Ge can form an alloy with Si relatively easy or be grown directly on Si starting from low-temperature epitaxy despite their large lattice mismatch (Si: 5.431 Å and Ge: 5.658 Å) as confirmed by a part of this work.…”

Section: Introductionmentioning

confidence: 99%

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Surface Treatment of Ge Grown Epitaxially on Si by Ex-Situ Annealing for Optical Computing by Ge Technology

Chen¹,

Huo²,

Cho³

et al. 2014

IEIE Transactions on Smart Processing and Computing

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Abstract:Ge is becoming an increasingly popular semiconductor material with high Si compatibility for on-chip optical interconnect technology. For a better manifestation of the meritorious material properties of Ge, its surface treatment should be performed satisfactorily before the electronic and photonic components are fabricated. Ex-situ rapid thermal annealing (RTA) processes with different gases were carried out to examine the effects of the annealing gases on the thin-film quality of Ge grown epitaxially on Si substrates. The Ge-on-Si samples were prepared in different structures using the same equipment, reduced-pressure chemical vapor deposition (RPCVD), and the samples annealed in N 2 , forming gas (FG), and O 2 were compared with the unannealed (deposited and only cleaned) samples to confirm the improvements in Ge quality. To evaluate the thin-film quality, room-temperature photoluminescence (PL) measurements were performed. Among the compared samples, the O 2 -annealed samples showed the strongest PL signals, regardless of the sample structures, which shows that ex-situ RTA in the O 2 environment would be an effective technique for the surface treatment of Ge in fabricating Ge devices for optical computing systems.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Surface Treatment of Ge Grown Epitaxially on Si by Ex-Situ Annealing for Optical Computing by Ge Technology

Chen¹,

Huo²,

Cho³

et al. 2014

IEIE Transactions on Smart Processing and Computing

Self Cite

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Silicon Photonic Filters: A Pathway from Basics to Applications

Saha,

Brunetti,

di Toma

et al. 2024

Advanced Photonics Research

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Silicon photonics has found a profound place among emerging technologies in the past few decades due to several advantages. Due to a series of breakthroughs and increased funding from private and government sectors, the development of silicon photonics has accelerated especially starting from the two years 2004–2005 with a persisting and ever‐growing momentum. Among various components, the silicon photonic filters that selectively pass or block particular wavelengths with a finite bandwidth have found particular interest as they are useful in signal processing in different fields ranging from optical communication to microwave photonics and quantum photonics. Herein, a comprehensive review of silicon photonic filters focusing on the four most commonly used architectures, such as microring resonators, waveguide Bragg grating, Mach–Zehnder interferometers, and arrayed waveguide grating, encapsulating basics, and guidelines, in terms of simulating tools and topologies, of realizing reconfigurable and high‐performing filters for several applications, is provided. The novelty of this review relies on the fact that it summarizes these filter architectures covering a broad range of applications concisely and constructively and includes the basics, growth, and future trends, providing a clear understanding and importance of silicon photonic filters from research to commercialization perspective.

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Germanium based photonic components toward a full silicon/germanium photonic platform

Reboud

Gassenq

Hartmann

et al. 2017

Progress in Crystal Growth and Characterization of Materials

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Effects of germanium incorporation on optical performances of silicon germanium passive devices for group-IV photonic integrated circuits

Cited by 6 publications

References 27 publications

Surface Treatment of Ge Grown Epitaxially on Si by Ex-Situ Annealing for Optical Computing by Ge Technology

Surface Treatment of Ge Grown Epitaxially on Si by Ex-Situ Annealing for Optical Computing by Ge Technology

Silicon Photonic Filters: A Pathway from Basics to Applications

Germanium based photonic components toward a full silicon/germanium photonic platform

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