Germanium based photonic components toward a full silicon/germanium photonic platform

Reboud, V.; Gassenq, A.; Hartmann, J. M.; Widiez, J.; Virot, L.; Aubin, J.; Guilloy, Kévin; Tardif, Samuel; Fédéli, Jean-Marc; Pauc, N.; Chelnokov, A.; Calvo, V.

doi:10.1016/j.pcrysgrow.2017.04.004

Cited by 69 publications

(43 citation statements)

References 219 publications

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“…Ge thus provides singular advantages and complementarities over pure Si platforms. Group-IV nanophotonics therefore enable complex on-chip functionalities [6][7][8][9][10] , from light generation and modulation to waveguiding and light detection [11][12][13][14] .…”

Section: Introductionmentioning

confidence: 99%

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28 Gbps silicon-germanium hetero-structure avalanche photodetectors

Benedikovič

Virot

Aubin

et al. 2020

Integrated Optics: Devices, Materials, and Technologies XXIV

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Owing to its low-cost, high-yield, and dense integration ability, silicon nanophotonics is a good candidate to tackle the needs of exponentially growing communications in data centers, high-performance computers, and cloud services. Moreover, a number of nanophotonic functions are now available on a single chip, as they take advantages of siliconfoundry process maturity and epitaxial germanium integration. Optical photodetectors are key building blocks in the library of group-IV components and their performances are quite successful nowadays. In particular, silicon-germanium waveguide-integrated photodetectors are fixing new standards for next generation of on-chip interconnects in terms of compactness, speed, power consumption and cost. Indeed, conventional pin photodetectors yield good responsivities (~1 A/W in a 1.5 µm wavelength range), high bandwidths (~50 GHz), and dark currents well below 1 µA. Despite recent advances, their optical power sensitivities remain rather modest and speeds are limited to 25 Gbps only, however. Compensating for the insufficient photodetector sensitivity requires higher transmitter output powers and therefore higher energy consumption. Additional energy savings can be obtained by eliminating receiver electronics. Alternatively, an appealing approach is to exploit device structures with an internal multiplication gain to lower even more the power budget and improve energy efficiency of chip-based optical links. In this work, we report on waveguideintegrated photodetectors with lateral silicon-germanium-silicon heterojunctions. Here, we present avalanche photodetectors fabricated on 200-mm silicon-on-insulator wafers using complementary metal-oxide-semiconductorcompatible processes. Devices operate in the low-gain-regime to facilitate high-speed link operations at 1.55 µm wavelengths. An error-free signal detection was achieved at 28 Gbps, with power sensitivity of-11 dBm for 10-9 biterror-rate, which is a relevant link rate for emerging chip-scale optical interconnects.

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Section: Introductionmentioning

confidence: 99%

“…In stark contrast, hetero-structured Si-Ge photodetectors take advantages of advanced fabrication processes. Hetero-junction devices are fabricated with full Si metal via-contacts and doping (by ion implantation) 10 . Such an approach avoids Ge process issues and simplifies the process flow.…”

Section: Introductionmentioning

confidence: 99%

28 Gbps silicon-germanium hetero-structure avalanche photodetectors

Benedikovič

Virot

Aubin

et al. 2020

Integrated Optics: Devices, Materials, and Technologies XXIV

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“…В качестве источников излучения в разрабатываемых кремниевых оптоэлектронных схемах в настоящее время используются лазеры на основе прямозонных материалов A III В V , которые интегрируются в кремниевые чипы с использованием технологии сращивания (bonding) [2,3], однако данный подход требует значительных технологических и финансовых затрат. Создание источников излучения на основе SiGe-структур позволило бы существенно уменьшить затраты на интеграцию на одной пластине фотонных и электронных элементов [4], поскольку такие структуры уже являются частью современной кремниевой интегральной технологии [5,6]. К настоящему времени показана возможность создания на основе SiGe-структур источников излучения ближнего инфракрасного диапазона, включая лазеры с оптической и электрической накачкой [7][8][9][10].…”

Section: Introductionunclassified

Кинетика люминесцентного отклика самоформирующихся наноостровков Ge(Si), встроенных в двумерные фотонные кристаллы

Яблонский¹,

Новиков²,

Stepikhova³

et al. 2020

Физика И Техника Полупроводников

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Представлены результаты исследования спектрально-кинетических характеристик фотолюминесценции двумерных фотонных кристаллов, полученных на основе структур c самоформирующимися наноостровками Ge(Si). Рассматривается наблюдаемое в таких структурах увеличение интенсивности сигнала фотолюминесценции наноостровков в спектральном диапазоне 1.1-1.6 мкм в результате взаимодействия с излучательными модами фотонных кристаллов вблизи точки зоны Бриллюэна и влияние такого взаимодействия на вероятность излучательной рекомбинации в наноостровках Ge(Si). Ключевые слова: наноостровки Ge(Si), фотонные кристаллы, фотолюминесценция, кинетика фотолюминесценции, эффект Парселла.

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“…It is one of the most promising technologies for high-density photonic device integration on Si wafers (Soref, 2006;Yamada et al, 2014). For Si-based lasers, two paths are currently explored: one based on hybrid III-V/Si lasers (Fang et al, 2007;Duan et al, 2014) and the other on the monolithic integration of electrically pumped group IV lasers (Sun, 2012;Saito et al, 2016;Reboud, Gassenq, Hartmann et al, 2017). Ge plays a central role in the latter approach but its indirect energy band gap is an issue.…”

Section: Introductionmentioning

confidence: 99%

Ni/GeSn solid-state reaction monitored by combined X-ray diffraction analyses: focus on the Ni-rich phase

et al. 2018

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The Ni/Ge 0.9 Sn 0.1 solid-state reaction was monitored by combining in situ X-ray diffraction, in-plane reciprocal space map measurements and in-plane pole figures. A sequential growth was shown, in which the first phase formed was an Ni-rich phase. Then, at 518 K, the mono-stanogermanide phase Ni(Ge 0.9 Sn 0.1 ) was observed. This phase was stable up to 873 K. Special attention has been given to the nature and the crystallographic orientation of the Ni-rich phase obtained at low temperature. It is demonstrated, with in-plane pole figure measurements and simulation, that it was the "-Ni 5 (Ge 0.9 Sn 0.1 ) 3 metastable phase with a hexagonal structure.

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Germanium based photonic components toward a full silicon/germanium photonic platform

Cited by 69 publications

References 219 publications

28 Gbps silicon-germanium hetero-structure avalanche photodetectors

28 Gbps silicon-germanium hetero-structure avalanche photodetectors

Кинетика люминесцентного отклика самоформирующихся наноостровков Ge(Si), встроенных в двумерные фотонные кристаллы

Ni/GeSn solid-state reaction monitored by combined X-ray diffraction analyses: focus on the Ni-rich phase

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