Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory

Lee, Ke Jing; Wang, Li Wen; Chiang, Te Kung; Wang, Yeong-Her

doi:10.3390/ma8105374

Cited by 43 publications

(22 citation statements)

References 20 publications

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“…Harvesting the nonlinear optical and dielectric properties with remarkable piezoelectric properties makes perovskite ferroelectrics advantageous for modern microelectronics. [ 1–6 ] In this respect, the understanding of the mechanism of phase transformations bringing these extraordinary functionalities is of primary importance. One of the most interesting perovskite materials is strontium titanate, SrTiO 3 , which is often referred to as incipient ferroelectric or quantum paraelectric.…”

Section: Introductionmentioning

confidence: 99%

Crystal Structure and the Spectral Response of the Ba‐Doped SrTiO₃ Incipient Ferroelectrics

Linnik

Luk’yanchuk

Mikheykin

et al. 2021

Physica Status Solidi (b)

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The crystal structure and lattice dynamics of quantum paraelectric BaxSr1−xTiO3 (x = 0, 0.01, 0.02) solid solutions are studied using X‐ray diffraction (XRD), Raman and terahertz‐infrared (THz‐IR) spectroscopies in a temperature range of 4–300 K. XRD and Raman spectroscopy reveal the cubic‐to‐tetragonal nonpolar structural phase transition at about 100 K. At the same time, Raman spectra manifest the presence of polar modes, TO2 and TO4, normally prohibited in paraelectric phase. Emergence of these modes indicates the appearance of the polar nanoregions in a broad temperature range. The modes become more intensive at low temperatures, and temperature dependence of their intensities on cooling reveals the kink‐like change of the slope from flat to steep, indicating on activation of polar nanoregions. The transmission THz‐IR spectra show that squared frequency of the polar TO1 soft mode, responsible for ferroelectric transition, follows Cochran's behavior at high temperatures. However, at low temperatures, it doesn't vanish at extrapolated Curie temperature but saturates, demonstrating the plateau feature below 20 K. This behavior, coherent with known saturation of the dielectric constant, indicates that transition to ferroelectric phase in BaxSr1−xTiO3 is suppressed by quantum fluctuations and the system stays in quantum paraelectric state at very low temperatures.

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Section: Introductionmentioning

confidence: 99%

Crystal Structure and the Spectral Response of the Ba‐Doped SrTiO₃ Incipient Ferroelectrics

Linnik

Luk’yanchuk

Mikheykin

et al. 2021

Physica Status Solidi (b)

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“…But still it is difficult to comprehend whether metal dopants are directly involved in vacancy formation or support the formation process13. In addition, the metal oxide (insulator) and top electrode has ample impact on upgrading the performance of RRAM devices14. Further study is required to control the impact of top electrodes on RS behavior of such RRAM devices.…”

mentioning

confidence: 99%

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

Rana

Akbar

Ismail

et al. 2017

Sci Rep

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Resistance switching characteristics of CeO2/Ti/CeO2 tri-layered films sandwiched between Pt bottom electrode and two different top electrodes (Ti and TaN) with different work functions have been investigated. RRAM memory cells composed of TaN/CeO2/Ti/CeO2/Pt reveal better resistive switching performance instead of Ti/CeO2/Ti/CeO2/Pt memory stacks. As compared to the Ti/CeO2 interface, much better ability of TaN/CeO2 interface to store and exchange plays a key role in the RS performance improvement, including lower forming/SET voltages, large memory window (~102) and no significant data degradation during endurance test of >104 switching cycles. The formation of TaON thinner interfacial layer between TaN TE and CeO2 film is found to be accountable for improved resistance switching behavior. Partial charge density of states is analyzed using density functional theory. It is found that the conductive filaments formed in CeO2 based devices is assisted by interstitial Ti dopant. Better stability and reproducibility in cycle-to-cycle (C2C) resistance distribution and Vset/Vreset uniformity were achieved due to the modulation of current conduction mechanism from Ohmic in low field region to Schottky emission in high field region.

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“…Still, the use of a Ti top electrode a significant voltage dropped, but the NiO film's effective electric pulse could not induce resistance switching. Similarly, in [126], the difference in the HRS/LRS resistance ratio of Al 10 6 against the Pt 10 3 reaffirmed that electrodes could influence the resistance switch in the RRAM device.…”

Section: Zno For Rram Application a Significance Of Electrodes In Zno Based Rrammentioning

confidence: 75%

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

et al. 2021

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Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed. The use of doping elements, multi-layered structures, suitable bottom and top electrodes, controlling the deposition materials, and the impact of hybrid structure for enhancing the switching dynamics are discussed. The potentials of ZnO-based RRAM for invisible and bendable devices are also covered. ZnO-based RRAM has the potential for possible application in bio-inspired cognitive computational systems. Thus, the synapse capability of ZnO is presented. The sneak-path current issue also besets ZnO-based RRAM crossbar array architecture. Hence, various attempts to subdue the bottleneck have been shown and discussed in this article. Interestingly, ZnO provides not only helpful memory features. However, it demonstrates the ability to be used in nonvolatile multifunctional memory devices. Also, this review covers various issues like the effect of electrodes, interfacial layers, proper switching layers, appropriate fabrication techniques, and proper annealing settings. These may offer a valuable understanding of the study and development of ZnO-based RRAM and should be an avenue for overcoming RRAM challenges.

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Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory

Cited by 43 publications

References 20 publications

Crystal Structure and the Spectral Response of the Ba‐Doped SrTiO₃ Incipient Ferroelectrics

Crystal Structure and the Spectral Response of the Ba‐Doped SrTiO₃ Incipient Ferroelectrics

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

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Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory

Cited by 43 publications

References 20 publications

Crystal Structure and the Spectral Response of the Ba‐Doped SrTiO3 Incipient Ferroelectrics

Crystal Structure and the Spectral Response of the Ba‐Doped SrTiO3 Incipient Ferroelectrics

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

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Crystal Structure and the Spectral Response of the Ba‐Doped SrTiO₃ Incipient Ferroelectrics

Crystal Structure and the Spectral Response of the Ba‐Doped SrTiO₃ Incipient Ferroelectrics