Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system

Mun, Jae‐Kyoung; Oh, Jung-Hun; Sung, Ho-Kun; Wang, Cong

doi:10.1016/j.sse.2015.09.007

Cited by 4 publications

(2 citation statements)

References 21 publications

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“…The obtained parameters of switching transistor MICs are listed in Table 2. It can be seen that they are largely comparable to the parameters of similar switching transistors with a gate length of 0.5 µm reported in [8,9]. Thus, the results of optimization of the pHEMT heterostructure design for switching transistors were reported.…”

supporting

confidence: 76%

AlGaAs/InGaAs/GaAs heterostructures for pHEMT switching transistors

Yu.

Dmitriev

Журавлев

et al. 2022

Technical Physics Letters

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The pHEMT heterostructures optimized in this work to improve the parameters of switching microwave transistors have a one-sided delta-doping at 6· 1012 cm-2 and an AlAs/GaAs spacer. Such heterostructures were used to fabricate the monolithic integrated circuits of single-pole double throw pHEMT switches with gate length and width of 0.5 μm and 100 μm, respectively. The resulting transistors had the following parameters: gmax=400 mS/mm, saturation current ID=380 mA/mm, ON-state resistance 1.0 Ω· mm, OFF-state capacitance 0.37 pF/mm. The switch parameters at 20 GHz are: insertion loss -2.2 dB, isolation -56 dB, return loss -11.7 dB, linearity P1 dB=21 dBm and IIP3=40 dBm. Keywords: Single-side doping, spacer design, maximal conductivity, pHEMT, switches.

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supporting

confidence: 76%

AlGaAs/InGaAs/GaAs heterostructures for pHEMT switching transistors

Yu.

Dmitriev

Журавлев

et al. 2022

Technical Physics Letters

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“…2. Как можно видеть, в целом они сопоставимы с параметрами аналогичных ключевых транзисторов с длиной затвора 0.5 µm, представленных в работах[8,9].В заключение отметим, что в работе представлены результаты оптимизации конструкции pHEMT-гетеро-Вольт-амперная характеристика тестового транзистора (w = 100 µm).…”

unclassified

Гетероструктуры AlGaAs/InGaAs/GaAs для ключевых pHEMT-транзисторов

Протасов¹,

Дмитриев²,

Журавлев³

et al. 2022

Письма В Журнал Технической Физики

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The pHEMT heterostructures optimized in this work to improve the parameters of switching microwave transistors have a one-sided δ-doping at 6×1012 cm-2 and an AlAs/GaAs spacer. Such heterostructures were used to fabricate the monolithic integrated circuits of single-pole double throw pHEMT switches with gate length and width of 0.5 μm and 100 μm, respectively. The resulting transistors had the following parameters: gm = 400 mS/mm, saturation current ID=380 mA/mm, ON-state resistance 1.0 Ω×mm, OFF-state capacitance 0.37 pF/mm. The switch parameters at 20 GHz are: insertion loss -2.2 dB, isolation -56 dB, return loss -11.7 dB, linearity P1dB 21 dBm and IIP3 40 dBm.

show abstract