Effects of diffusion-induced dislocations on the excess low-frequency noise

Nishida, M.

doi:10.1109/t-ed.1973.17632

Cited by 30 publications

(7 citation statements)

References 11 publications

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“…The dependence of DID and EED on oxygen concentration in the diffusion system and deposition time (Pig. 1) was similar to that previously reported [4, 12,131. I n transistor No.…”

Section: Dependence Of Dislocations On the Emitter Phosphorus Diffusisupporting

confidence: 91%

“…The hFC fall-off a t low current level is due to recombination in the emitter-base depletion layer region. As mentioned above, EED intersect the emitter-base junction and since they act as a generation-recombination centres [12], in transistor No. 1 a larger hFE fall-off a t low current level than in transistor No.…”

Section: Common-emitter Current Gainmentioning

confidence: 93%

“…Also, under emitter phosphorus diffusion conditions for transistor No. 1 the phosphosilicate glass on the wafer surface was thick [12]. Consequently, emitter phosphorus diffusion had a "gettering" action and undesirable nietallic impurities were removed from the emitter-base junction.…”

Section: Reverse Current-voltage Characteristic Of the Emitter-base Jmentioning

confidence: 99%

“…Since DID in diffused emitter areas penetrate approximately one third of the emitter-base junction depth [3, lo], any their contribution to deleterioiis effects on the electrical characteristics of planar NPN transistors niay be ruled out. However, EED intersect the emitter-base junction and also they extend through the hase np to the collector-base junction [lo, 111. As a consequence EED have deleterious effects on the electrical characteristics of planar NPN transistors: (i) they cause a reduction of the coininon-emitter current gain [12,13]; (ii) they cause an increase of the reverse eniitterbase current [ l l ] ; (iii) the encourage einitter-to-collector shorts, i.e. p i p s , through a possible localized dislocation-enhanced diffusion mechanism [14, 151 ; (iv) they cause a degradation of the reverse collector-base characteristic [16] ; (v) they cause an increase of excess low-frequency noise [12, 171 ; and finally (vi) they probably reduce reliahility 113, 181.…”

Section: Introductionmentioning

confidence: 99%

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Dependence of dislocations on emitter phosphorus diffusion conditions and their effects on electrical characteristics of silicon planar NPN transistors

Popović¹,

Stojadinović

1979

Phys. Stat. Sol. (a)

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It is shown that emitter edge dislocations (EED) need not be “distinct from and in addition to diffusion‐induced dislocations (DID)” as generally accepted. Namely, under certain emitter diffusion conditions, when DID just began to appear, EED and DID can become the same dislocations, originally created inside diffused emitter areas, and then, during emitter oxidation step, displaced towards edges of these areas. Also, it is shown that conventional method for EED elimination, although it considerably reduces a low‐frequency noise of planar NPN transistors, has undesirable effects on the other electrical characteristics: increases reverse emitter‐base current at voltages below avalanche breakdown, i.e. causes “soft” breakdown and reduces commonemitter current gain at low current level.

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“…The dependence of DID and EED on oxygen concentration in the diffusion system and deposition time (Pig. 1) was similar to that previously reported [4, 12,131. I n transistor No.…”

Section: Dependence Of Dislocations On the Emitter Phosphorus Diffusisupporting

confidence: 91%

Section: Common-emitter Current Gainmentioning

confidence: 93%

Section: Reverse Current-voltage Characteristic Of the Emitter-base Jmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Dependence of dislocations on emitter phosphorus diffusion conditions and their effects on electrical characteristics of silicon planar NPN transistors

Popović¹,

Stojadinović

1979

Phys. Stat. Sol. (a)

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“…Although an explanation based on Rayleigh-Platteau instability has been proposed for narrow nanowires 7 , the source of noise in wires of larger diameter (∼ 100 nm) is not clearly understood. Moreover, whether other defect kinetics, such as thermally activated movement of dislocations, 13 contribute to the observed noise still remains uncertain. * electronic mail:amrita@physics.iisc.ernet.in…”

mentioning

confidence: 99%

Electrochemical fabrication of ultralow noise metallic nanowires with hcp crystalline lattice

Singh

Sai

Ghosh

2008

Applied Physics Letters

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We experimentally demonstrate that low-frequency electrical noise in silver nanowires is heavily suppressed when the crystal structure of the nanowires is hexagonal closed pack (hcp) rather than face centered cubic (fcc). Using a low-potential electrochemical method we have grown single crystalline silver nanowires with hcp crystal structure, in which the noise at room temperature is two to six orders of magnitude lower than that in the conventional fcc nanowires of the same diameter. We suggest that motion of dislocations is probably the primary source of electrical noise in metallic nanowires which is strongly diminished in hcp crystals.Metallic nanowires are integral components of several nanoscale electronic circuits, particularly in crossbar interconnect architectures. 1 Both experiments 2,3 and electrical modelling 4 have often addressed the effects of size on average electrical resistivity (ρ) of the nanowires, but very little is known about the low-frequency 1/f -type electrical noise in these systems which can seriously impede their application in nanoelectronics. 5,6 Moreover, recent experiments suggest that the magnitude of noise in nanowires can indeed be much larger than that generally observed in thin polycrystalline metal films. 7 Hence our objective here is to address two issues: (1) what is the microscopic origin of low-frequency electrical noise in nanowires, and (2) can the noise in nanowires be suppressed or reduced by appropriate engineering of growth and structural parameters.The power spectral density S R of low-frequency 1/f noise in resistance R is normalized as,where N e is the total number of electrons, and γ H is the phenomenological Hooge parameter that depends on the material properties, such as nature and kinetics of disorder, scattering cross-section of electrons, crystallinity, and so on. 8,9 In thin polycrystalline metallic films, γ H generally lies in the range ∼ 10 −3 −10 −5 , which is predominantly due to the migration of point defects along the grain boundaries. 10,11,12 Surprisingly though, the value of γ H , in electrochemically grown single crystalline fcc silver nanowires (AgNWs) (≈ 15 nm diameter ) was found to be very large (γ H ∼ 10 −1 − 10 −2 ), even when the grain boundaries are expected to be absent. Although an explanation based on Rayleigh-Platteau instability has been proposed for narrow nanowires 7 , the source of noise in wires of larger diameter (∼ 100 nm) is not clearly understood. Moreover, whether other defect kinetics, such as thermally activated movement of dislocations, 13 contribute to the observed noise still remains uncertain. * electronic mail:amrita@physics.iisc.ernet.inThe nature of crystallinity is known to have a profound influence on the kinetics of dislocations. 14 Since it is intimately connected to plasticity, a study of noise can also be relevant to understand the intrinsic structural aspects of the nanowires. Hence, to evaluate the role of defect kinetics on noise in nanowires, we have carried out detailed electrical characterization of si...

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Effects of emitter diffusion-induced stresses on the common-emitter current gain of silicon planar transistors

Stojadinović

Ristić

1979

Phys. Stat. Sol. (a)

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Effects of diffusion-induced dislocations on the excess low-frequency noise

Cited by 30 publications

References 11 publications

Dependence of dislocations on emitter phosphorus diffusion conditions and their effects on electrical characteristics of silicon planar NPN transistors

Dependence of dislocations on emitter phosphorus diffusion conditions and their effects on electrical characteristics of silicon planar NPN transistors

Electrochemical fabrication of ultralow noise metallic nanowires with hcp crystalline lattice

Effects of emitter diffusion-induced stresses on the common-emitter current gain of silicon planar transistors

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