Effects of conditioning temperature on polishing pad for oxide chemical mechanical polishing process

Kim, Nam–Hoon; Choi, Gwon-Woo; Park, Jin‐Seong; Seo, Yong-Jin; Lee, Woo-Sun

doi:10.1016/j.mee.2005.07.080

Cited by 6 publications

(8 citation statements)

References 18 publications

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“…By implementing such protocol, the pad thickness profile can be better maintained and the WIWNU can be improved [31,32]. Pad conditioning temperature is also an important aspect that could influence the pad surface properties and the CMP performance [33][34][35][36][37][38]. The removal rate of oxide film after high temperature conditioning is much higher than that at low temperature conditioning.…”

Section: Pad Conditioning and Its Effect On Cmp Performancementioning

confidence: 99%

“…The removal rate of oxide film after high temperature conditioning is much higher than that at low temperature conditioning. Higher temperature conditioning also makes it easier to remove the slurry residues from pores and grooves of polishing pads [33][34][35]. Diamond grid shape, size, and numbers, and their positions (alignment) on the conditioner head are also factors that influence the conditioning effects/efficiency.…”

Section: Pad Conditioning and Its Effect On Cmp Performancementioning

confidence: 99%

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Pads for IC CMP

Wang

Paul

Kobayashi

et al. 2007

Microelectronic Applications of Chemical Mechanical Planarization

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The chemical-mechanical polishing or planarization (CMP) process is a complex interplay between the wafer and the consumables involved. The consumables include slurry, pad, conditioner, and so on. During polishing, the pad carries the slurry and delivers it to the wafer surface. It also transmits the normal and shear forces from the polisher to the wafer. Therefore, polishing pad plays a critical role in the CMP process and influences the outcomes such as material removal rate (MRR), within-wafer nonuniformity (WIWNU), wafer-to-wafer nonuniformity (WTWNU), step height reduction efficiency (SHRE), and defect counts.As the CMP process is a combination of mechanical and chemical processes, the polishing pad has to endure repeated mechanical stress and constant chemical attacks. The applied downforce and polishing-induced friction force cause various levels of compression and abrasion. Slurry components such as oxidizers and acids can react with different components of the pads. Thus the polishing pad must have sufficient mechanical integrity and chemical resistance to survive the rigors of polishing. Polishing pads must balance the needs of hardness, modulus for planarity, and strength to resist wear and tear during polishing. Pads must also be able to survive the aggressive slurry chemistry used in CMP polishing without degrading, delaminating, blistering, or warping, since CMP slurries for the polishing of interlevel dielectric (ILD) oxide layers are usually highly alkaline with pH as high as 11, and CMP slurries for the polishing of metal films are highly acidic Microelectronic Applications of Chemical Mechanical Planarization, Edited by Yuzhuo Li

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Section: Pad Conditioning and Its Effect On Cmp Performancementioning

confidence: 99%

Section: Pad Conditioning and Its Effect On Cmp Performancementioning

confidence: 99%

Pads for IC CMP

Wang

Paul

Kobayashi

et al. 2007

Microelectronic Applications of Chemical Mechanical Planarization

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“…In view of the shortcomings of these technologies, the fixed abrasive pad (FAP) with self-conditioning ability was proposed to overcome the surface glazed problem, which was commonly made of abrasive, hydrophilic polymer and other additives. Kim et al (2005) developed a water-soluble FAP with hydrophilic polymer. The experimental results showed that the glazed phenomenon of it was significantly improved due to the self-conditioning ability, and the material removal rate was increased by 30% than ordinary polishing pad.…”

Section: Introductionmentioning

confidence: 99%

“…The above-mentioned conclusions have indicated that the surface-glazed phenomenon of polishing pad is existed in CMP process, which has important effect on the CMP performance. Thus, the diamond conditioners (Zhou et al, 2008;Wang et al, 2020aWang et al, , 2020b, high pressure micro jet (Tsai and Yang, 2012;Kim et al, 2005) and other technologies (Shin et al, 2016) were proposed for solving this problem of polishing pad. The experimental results have showed that these technologies can remove the glazed layer on the pad surface, which improves the material removal ability of the polishing pad.…”

Section: Introductionmentioning

confidence: 99%

Tribological glazing evolution of fixed abrasive pad under different polishing solution conditions

Tian,

Wu,

Pang

et al. 2023

ILT

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Purpose This study aims to clarify the influence mechanism of polishing solution type on the glazing evolution of fixed abrasive pad under different interfacial pressure conditions. Design/methodology/approach The tribological experiments were carried out on the friction and wear machinery with W3-5 diamond fixed abrasive pad and quartz glass workpiece under three polishing solution types of five pressure conditions. The changes of surface morphology, porosity and hardness of fixed abrasive pad were detected by white light interferometer, optical microscope and shore hardness tester. Findings The results showed that the glazed phenomenon of fixed abrasive pad is occurred after a certain time, which is more obvious with the increasing of interfacial pressures. The polishing solution type has a significant effect on the glazing time, although the glazed phenomenon is inevitable. The mechanism of it is that the micro-convex peaks on the surface of the fixed abrasive pad are easily wear, and the pores are blocked by the accumulation of waste debris generated during the experiment process. Thus, a smooth and high-density hard layer is formed on the surface of the fixed abrasive pad which induces the decreasing of the friction coefficient and surface roughness value. For selected polishing solution types, the wear rate of micro-convex peaks is different due to the corrosion action difference with polishing pad surface. Originality/value The main contribution of this work is to provide a new investigating method for further understanding the glazing evolution mechanism of fixed abrasive pad. Peer review The peer review history for this article is available at: https://publons.com/publon/10.1108/ILT-08-2023-0257/

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“…Some problems such as peaks, bumps, large particles, and pin-holes on the surface of ITO thin film were reported, which caused the destruction of color quality, the reduction of device life time, and short-circuit [2]. The authors' prior investigation reported that these surface problems could be removed by polishing process for thermal oxide chemical mechanical planarization (CMP) with the control of pad conditioning temperature [3]. Polishing pad plays a key role in CMP, which has been recognized as a critical step to improve the surface morphology of wafers for semiconductor chip fabrication [4].…”

Section: Introductionmentioning

confidence: 99%

Indium Tin Oxide Film Characteristics after Chemical Mechanical Polishing Process with Control of Pad Conditioning Temperature

Kim

Choi

Seo

et al. 2007

SSP

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Indium tin oxide (ITO) CMP was performed by change of de-ionized water (DIW) temperature in pad conditioning process. DIW with high temperature was employed in pad conditioning immediately before ITO-CMP. The removal rate of ITO thin film polished by silica slurry immediately after pad conditioning process with the different DIW temperatures dramatically increased to 93.0 nm/min after pad conditioning at DIW of 75 oC, while that after the general conditioning process at 30 oC was about 66.1 nm/min. The grains of ITO thin film became indistinguishable by CMP after pad conditioning with the high-temperature DIW. The carrier density decreased with the increase of conditioning temperature. The hall mobility rapidly increased regardless of conditioning temperature. The uniformity of optical transmittance also improved.

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Effects of conditioning temperature on polishing pad for oxide chemical mechanical polishing process

Cited by 6 publications

References 18 publications

Pads for IC CMP

Pads for IC CMP

Tribological glazing evolution of fixed abrasive pad under different polishing solution conditions

Indium Tin Oxide Film Characteristics after Chemical Mechanical Polishing Process with Control of Pad Conditioning Temperature

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