Effects of Channel Thinning on Threshold Voltage Shift in Ultrathin-Body Silicon Nanocrystal Memories

Abstract

High performance Schottky diodes formed with a BCl 3 passivation layer on Pt/Al/n-InP are presented. The diode realizes a barrier height as high as 0.85 eV, and the reverse current density is 1:44 Â 10 À6 A/cm 2 at À3 V. Secondary ion mass spectroscopy for depth profiles measurements reveals the existence of B and Cl elements at the contact interface. The electron spectroscopy chemical analysis shows that the surface layer of the passivated InP substrate is composed of InPO 4 and chloride. The improvement of the barrier height of Pt/Al/n-InP diode is presumably due to the formation of the aluminum oxide at the contact interface and due to the chlorine passivation on the interface states.

On the Influence of Fin Corner Rounding in 3D Nanocrystal Flash Memories

“…In figure 6 the model fits data provided by [6], where the fin width is varied keeping unaltered the gate stack. We remark that the model allows reproducing the dependence of the V T with the width over a wide range of dimensions; down to 10nm (i.e.…”