Effects of carbon on the electrical and optical properties of InN, GaN, and AlN

Lyons, John L.; Janotti, Anderson; Walle, Chris G. Van de

doi:10.1103/physrevb.89.035204

Cited by 381 publications

(236 citation statements)

References 56 publications

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“…For example, as reported in ref. 32, within GGA-PBE the band gap of AlN is underestimated by 34%, the band gap of GaN is underestimated by 55%, and InN is predicted to be metallic. Band-gap errors of this magnitude clearly lead to uncertainties in defect transition levels and formation energies.…”

Section: Introductionmentioning

confidence: 99%

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Computationally predicted energies and properties of defects in GaN

2017

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Recent developments in theoretical techniques have significantly improved the predictive power of density-functional-based calculations. In this review, we discuss how such advancements have enabled improved understanding of native point defects in GaN. We review the methodologies for the calculation of point defects, and discuss how techniques for overcoming the band-gap problem of density functional theory affect native defect calculations. In particular, we examine to what extent calculations performed with semilocal functionals (such as the generalized gradient approximation), combined with correction schemes, can produce accurate results. The properties of vacancy, interstitial, and antisite defects in GaN are described, as well as their interaction with common impurities. We also connect the first-principles results to experimental observations, and discuss how native defects and their complexes impact the performance of nitride devices. Overall, we find that lower-cost functionals, such as the generalized gradient approximation, combined with band-edge correction schemes can produce results that are qualitatively correct. However, important physics may be missed in some important cases, particularly for optical transitions and when carrier localization occurs.

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Section: Introductionmentioning

confidence: 99%

“…This transition would explain the occurrence of yellow luminescence in p-type GaN, 81,82 in which nitrogen vacancies are expected to occur as compensating centers due to their low formation energies. Other sources of yellow luminescence, such as Ga vacancies (or their complexes, as discussed above) or carbon 32,73 are less likely to be present in p-type GaN.…”

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confidence: 99%

Computationally predicted energies and properties of defects in GaN

2017

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“…Carbon in OMVPE has been studied as both an unintentional and intentional dopant for a long time [171]. Carbon is an amphoteric dopant, which has been systematically investigated in AlN, GaN, InN, AlSb, and GaInNAs, to name a few [96,[208][209][210][211][212][213][214]. In GaN, for example, C-related defects are the likely origin of the yellow luminescence (YL) [212,214], which is frequently observed.…”

Section: Carbon Co-doping Effectsmentioning

confidence: 99%

A brief review of co-doping

et al. 2016

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Dopants and defects are important in semiconductor and magnetic devices. Strategies for controlling doping and defects have been the focus of semiconductor physics research during the past decades and remain critical even today. Co-doping is a promising strategy that can be used for effectively tuning the dopant populations, electronic properties, and magnetic properties. It can enhance the solubility of dopants and improve the stability of desired defects. During the past 20 years, significant experimental and theoretical efforts have been devoted to studying the characteristics of co-doping. In this article, we first review the historical development of co-doping. Then, we review a variety of research performed on co-doping, based on the compensating nature of co-dopants. Finally, we review the effects of contamination and surfactants that can explain the general mechanisms of co-doping.

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“…Unfortunately, it has also been found that using carbon can often result in significant current-collapse [10,15]. It is clear that CC in these devices mostly results from charge storage in deep levels in the buffer, with the difference in CC between Fe and C doping reported to be the result of their relative energy levels, respectively pinning the Fermi level in the upper and lower halves of the bandgap [17] - [22]. Monitoring the substrate bias dependence of the 2DEG current, and its dispersion as the ramp-rate and temperature are varied, allowed a model for the transport within each layer within the buffer to be constructed [18] - [20].…”

Section: Introductionmentioning

confidence: 99%