Effects of annealing temperature on the electrical characteristics of Li–N co-doped polycrystalline ZnO thin film transistors

Tian, Longjie; Zhou, Dongzhan; Ma, Yafeng; Zhang, Xiqing; Wang, Yongsheng

doi:10.1016/j.spmi.2017.05.003

Cited by 7 publications

(1 citation statement)

References 33 publications

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“…Over the past decade, ZnO-based thin film transistors (TFTs) have gained extensive attention for the fabrication of electronic devices, either emerging as a amorphous or a crystalline structure [1][2][3][4]. The corresponding TFTs exhibited relatively satisfactory electrical characteristics and high optical transparency, however, those electrical characteristics, including saturation mobility (μ SAT ), threshold voltage (V TH ) and on/ off current ratio (I ON /I OFF ), are strongly affected by the existence of native defects [5][6][7][8], especially the oxygen vacancy (Vo) in the channel layer.…”

Section: Introductionmentioning

confidence: 99%

Room-temperature fabrication of bilayer InZnO:Li/MgZnO:Li thin film transistors using radio frequency magnetron sputtering

Tian¹,

Ma²,

Wang³

et al. 2018

J. Phys. D: Appl. Phys.

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In this work the authors present a study aiming to introduce the bilayer InZnO:Li/MgZnO:Li channel to increase the characteristics of thin film transistors. And the authors utilized radio frequency magnetron sputtering technology to design and fabricate the electronic devices at room temperature. All the proposed devices showed smooth surfaces, which have a positive effect on the TFT's performance. Besides, x-ray diffraction pattern analysis was performed to investigate the microstructure of InZnO:Li/MgZnO:Li films. Finally, the corresponding bilayer InZnO:Li/MgZnO:Li thin film transistors without thermal annealing treatment showed a superior performance which can rival that of current thin film transistors extensively applied in display industry; specifically, a saturation mobility of 25.2 cm 2 V −1 s −1 , a low threshold voltage of 5.7 V and a large on/off current ratio of 1.5 × 10 7 .

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