Room-temperature fabrication of bilayer InZnO:Li/MgZnO:Li thin film transistors using radio frequency magnetron sputtering

Abstract

In this work the authors present a study aiming to introduce the bilayer InZnO:Li/MgZnO:Li channel to increase the characteristics of thin film transistors. And the authors utilized radio frequency magnetron sputtering technology to design and fabricate the electronic devices at room temperature. All the proposed devices showed smooth surfaces, which have a positive effect on the TFT's performance. Besides, x-ray diffraction pattern analysis was performed to investigate the microstructure of InZnO:Li/MgZnO:Li films. Finally, the corresponding bilayer InZnO:Li/MgZnO:Li thin film transistors without thermal annealing treatment showed a superior performance which can rival that of current thin film transistors extensively applied in display industry; specifically, a saturation mobility of 25.2 cm 2 V −1 s −1 , a low threshold voltage of 5.7 V and a large on/off current ratio of 1.5 × 10 7 .